Zobrazeno 1 - 10
of 203
pro vyhledávání: '"Castellani, N."'
Autor:
Esmanhotto, E., Hirtzlin, T., Castellani, N., Martin, S., Giraud, B., Andrieu, F., Nodin, J. F., Querlioz, D., Portal, J-M., Vianello, E.
Crossbar arrays of resistive memories (RRAM) hold the promise of enabling In-Memory Computing (IMC), but essential challenges due to the impact of device imperfection and device endurance have yet to be overcome. In this work, we demonstrate experime
Externí odkaz:
http://arxiv.org/abs/2203.01680
Autor:
Moro, Filippo, Esmanhotto, E., Hirtzlin, T., Castellani, N., Trabelsi, A., Dalgaty, T., Molas, G., Andrieu, F., Brivio, S., Spiga, S., Indiveri, G., Payvand, M., Vianello, E.
Spiking Neural Networks (SNNs) can unleash the full power of analog Resistive Random Access Memories (RRAMs) based circuits for low power signal processing. Their inherent computational sparsity naturally results in energy efficiency benefits. The ma
Externí odkaz:
http://arxiv.org/abs/2202.05094
Akademický článek
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Autor:
Bourgeois, G., Meli, V., Al Mamun, F., Mazen, F., Nolot, E., Martinez, E., Barnes, J.-P., Bernier, N., Jannaud, A., Laulagnet, F., Hemard, B., Castellani, N., Bernard, M., Sabbione, C., Milesi, F., Magis, T., Socquet-Clerc, C., Coig, M., Garrione, J., Cyrille, M.-C., Charpin, C., Navarro, G., Andrieu, F.
Publikováno v:
In Microelectronics Reliability November 2021 126
Autor:
Galigani, M., Castellani, N., Donno, B., Franza, M., Zuber, C., Allet, L., Garbarini, F., Bassolino, M.
Publikováno v:
In Neuropsychologia November 2020 148
Autor:
Lama, G., Bourgeois, G., Bernard, M., Castellani, N., Sandrini, J., Nolot, E., Garrione, J., Cyrille, M.C., Navarro, G., Nowak, E.
Publikováno v:
In Microelectronics Reliability November 2020 114
Autor:
Bourgeois, G., Meli, V., Antonelli, R., Socquet-Clerc, C., Magis, T., Laulagnet, F., Hemard, B., Bernard, M., Fellouh, L., Dezest, P., Krawczyk, J., Dominguez, S., Baudin, F., Garrione, J., Pellissier, C., Dallery, J.-A., Castellani, N., Cyrille, M.-C., Charpin, C., Andrieu, F., Navarro, G.
Publikováno v:
IEEE EDTM 2023-7th IEEE Electron Devices Technology and Manufacturing
IEEE EDTM 2023-7th IEEE Electron Devices Technology and Manufacturing, IEEE, Mar 2023, SEOUL, South Korea. ⟨10.1109/EDTM55494.2023.10102961⟩
IEEE EDTM 2023-7th IEEE Electron Devices Technology and Manufacturing, IEEE, Mar 2023, SEOUL, South Korea. ⟨10.1109/EDTM55494.2023.10102961⟩
International audience; In this work, we demonstrate the integration feasibility of Crossbar arrays based on Ovonic-Threshold Switching (OTS) selector and "Wall"-based Phase-Change Memory, realized with a "Double-Patterned Self-Aligned" (DPSA) struct
Autor:
de Camaret, C., Bourgeois, G., Cueto, O., Meli, V., Martin, S., Despois, D., Beugin, V., Castellani, N., Cyrille, M.C., Andrieu, F., Arcamone, J., Le-Friec, Y., Navarro, Gabriele
Publikováno v:
ESSDERC 2022-IEEE 52nd European Solid-State Device Research Conference
ESSDERC 2022-IEEE 52nd European Solid-State Device Research Conference, Sep 2022, Milan, Italy. pp.233-236, ⟨10.1109/ESSDERC55479.2022.9947190⟩
ESSDERC 2022-IEEE 52nd European Solid-State Device Research Conference (ESSDERC)
ESSDERC 2022-IEEE 52nd European Solid-State Device Research Conference, Sep 2022, Milan, Italy. pp.233-236, ⟨10.1109/ESSDERC55479.2022.9947190⟩
ESSDERC 2022-IEEE 52nd European Solid-State Device Research Conference (ESSDERC)
International audience; In this work, we present the extensive electrical characterization of 4kb Phase-Change Memory (PCM) arrays based on "Wall" structure and Ge-rich GeSbTe (GST) material, integrating a SiC dielectric with low thermal conductivity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::58674e111858b84341434cc99a94364f
https://cea.hal.science/cea-03927940/document
https://cea.hal.science/cea-03927940/document
Autor:
Lama, G., Bernard, M., Garrione, J., Bernier, N., Castellani, N., Bourgeois, G., Cyrille, M.C., Andrieu, F., Navarro, Gabriele
Publikováno v:
ESSDERC 2022-IEEE 52nd European Solid-State Device Research Conference (ESSDERC)
ESSDERC 2022-IEEE 52nd European Solid-State Device Research Conference
ESSDERC 2022-IEEE 52nd European Solid-State Device Research Conference, Sep 2022, Milan, Italy. pp.237-240, ⟨10.1109/ESSDERC55479.2022.9947157⟩
ESSDERC 2022-IEEE 52nd European Solid-State Device Research Conference
ESSDERC 2022-IEEE 52nd European Solid-State Device Research Conference, Sep 2022, Milan, Italy. pp.237-240, ⟨10.1109/ESSDERC55479.2022.9947157⟩
International audience; In this work, we introduce an innovative Phase-Change Memory (PCM) based on a TiTe and Ge$_2$Sb$_2$Te$_5$ (GST) bi-layer stack that presents low resistance variability since the out-of-fabrication in 4 kb array. It allows crea
Akademický článek
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