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0-level Vacuum Packaging RT Process for MEMS Resonators

Autor: Abelé, N., Grogg, D., Hibert, C., Casset, F., Ancey, P., Ionescu, A.

Publikováno v: Dans Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS - DTIP 2007, Stresa, lago Maggiore : Italie (2007)

A new Room Temperature (RT) 0-level vacuum package is demonstrated in this work, using amorphous silicon (aSi) as sacrificial layer and SiO2 as structural layer. The process is compatible with most of MEMS resonators and Resonant Suspended-Gate MOSFE

Externí odkaz: http://arxiv.org/abs/0802.3093

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Tuneable Capacitor based on dual picks profile of the sacrificial layer

Autor: Soulimane, S., Casset, F., Chapuis, F., Charvet, P. -L., aïd, M.

Publikováno v: Dans Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS - DTIP 2007, Stresa, lago Maggiore : Italie (2007)

In this paper, we present a novel dual gap tuneable capacitor process based on the profile of the sacrificial layer. This profile involves a tri-layer photo-resist process with only one mask level. This realization is based on a special profile of th

Externí odkaz: http://arxiv.org/abs/0802.3078

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Silicon on Nothing Mems Electromechanical Resonator

Autor: Durand, C., Casset, F., Ancey, P., Judong, F., Talbot, A., Quenouillere, R., Renaud, D., Borel, S., Florin, B., Buchaillot, L.

Publikováno v: Dans Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS - DTIP 2007, Stresa, lago Maggiore : Italie (2007)

The very significant growth of the wireless communication industry has spawned tremendous interest in the development of high performances radio frequencies (RF) components. Micro Electro Mechanical Systems (MEMS) are good candidates to allow reconfi

Externí odkaz: http://arxiv.org/abs/0802.3051

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