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pro vyhledávání: '"Cassemiro, Gustavo H."'
Autor:
Cassemiro, Gustavo H., Hinostroza, C. David, de Faria, Leandro Rodrigues, Mayoh, Daniel A., Aguiar, Maria C. O., Lees, Martin R., Balakrishnan, Geetha, Jiménez, J. Larrea, Machado, Antonio Jefferson da Silva, Martelli, Valentina, Brito, Walber H.
We studied the effects of point defects and Hg impurities in the electronic properties of bismuth iodide (Bi$_4$I$_4$). Our transport measurements after annealing at different temperatures show that the resistivity of Bi$_4$I$_4$ depends on its therm
Externí odkaz:
http://arxiv.org/abs/2410.18305
Autor:
Hinostroza, C. David, de Faria, Leandro Rodrigues, Cassemiro, Gustavo H., Jiménez, J. Larrea, Machado, Antonio Jefferson da Silva, Brito, Walber H., Martelli, Valentina
The bismuth-halide Bi$_4$I$_4$ undergoes a structural transition around $T_P\sim 300$K, which separates a high-temperature $\beta$ phase ($T>T_P$) from a low-temperature $\alpha$ phase ($T
Externí odkaz:
http://arxiv.org/abs/2404.16194