Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Cassan C. C. Visser"'
Autor:
Cassan C. C. Visser, A. Nichelatti, Lianwei Wang, C.R. de Boer, H. Schellevis, T.N. Nguyen, Pasqualina M. Sarro
Publikováno v:
The Sixteenth Annual International Conference on Micro Electro Mechanical Systems, 2003. MEMS-03 Kyoto. IEEE.
Closely spaced, through-wafer interconnects are of large interest in RF MEMS and MEMS packaging. In this paper, a suitable technique to realize large arrays of small size through-wafer holes is presented. This approach is based on macroporous silicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::645e2a2770eced531362d216cf3caa43
https://doi.org/10.1109/memsys.2003.1189829
https://doi.org/10.1109/memsys.2003.1189829
Publikováno v:
SPIE Proceedings.
In this paper we present the effect of the doping and annealing on the mechanical and optical properties of thin films of silicon carbide prepared by plasma enhanced chemical vapor deposition (PECVD) technique at 400 degree(s)C and using methane (CH
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04744a9a679efc3d5eb5ce766f6847e6
https://doi.org/10.1117/12.444718
https://doi.org/10.1117/12.444718
Autor:
Pasqualina M. Sarro, P.T.J. Gennissen, M. Bartek, Cassan C. C. Visser, Patrick J. French, A. van der Boogaard
Publikováno v:
SPIE Proceedings.
This paper presents the development of a new technique to prevent occurrence of compressive stress in epipoly. The use of an epitaxial reactor to grow polysilicon enables the growth of monocrystalline silicon (for bipolar electronics) and polysilicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::424ad297b1b17171a365d954e96283e5
https://doi.org/10.1117/12.251240
https://doi.org/10.1117/12.251240
Publikováno v:
Journal of the Electrochemical Society, 152 (11), 2005
In this paper, we present a systematic investigation of the influence of the deposition parameters on the deposition rate, etch rate, and mechanical stress of SiC films prepared by plasma-enhanced chemical vapor deposition (PECVD) technique. Among th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c47da01563d9b06c3f7b9e2e822a891d
https://doi.org/10.1149/1.2060693
https://doi.org/10.1149/1.2060693