Experimental determination of lens aberrations from the intensity point-spread function in the focal region

Autor: Peter Dirksen, Augustus J. E. M. Janssen, Casper A. H. Juffermans, Ad Leeuwestein, Joseph J. M. Braat

Publikováno v: Proceedings Optical Microlithography XVI, 25-28 February 2003, Santa Clara, California, 1-10
STARTPAGE=1;ENDPAGE=10;TITLE=Proceedings Optical Microlithography XVI, 25-28 February 2003, Santa Clara, California

In this paper we show various results of aberration retrieval using the pinhole method in conjunction with the extended Nijboer-Zernike theory. The experiments are performed on modern wafer scanners. Keyboard commanded offsets of the movable lens ele

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f2552cc662a14792d520e23c211f1b4c
https://doi.org/10.1117/12.485388

Characterization of a projection lens using the extended Nijboer-Zernike approach

Autor: Joseph J. M. Braat, Casper A. H. Juffermans, Alvina M. Williams, Peter Dirksen, Peter De Bisschop, Guido C.A.M. Janssen

Publikováno v: Proceedings Optical Microlithography XV, 5-8 March 2002, Santa Clara, California, 1392-1399
STARTPAGE=1392;ENDPAGE=1399;TITLE=Proceedings Optical Microlithography XV, 5-8 March 2002, Santa Clara, California

In this paper we give the proof of principle of a new experimental method to determine the aberrations of an optical system in the field. The measurement is based on the observation of the intensity point spread function of the lens. To analyse and i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b04556f67b139eca8737b9d5bb272122
https://doi.org/10.1117/12.474523

Optical proximity correction for 0.3 μm i-line lithography

Autor: O. Otto, Kurt G. Ronse, Patrick Jaenen, P. Tzviatkov, Casper A. H. Juffermans, Rik Jonckheere, L. Van den hove, Anthony Yen, J. Garofalo, A. Wong

Publikováno v: Microelectronic Engineering. 30:141-144

In printing random logic circuits down to 0.3 μm using i-line lithography, optical proximity correction is required to maintain across-the-chip linewidth uniformity. Using a rule-based approach with parametric anchoring, process characterization tim

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7c962dab7379b2f2a1803cbcc67f0daa
https://doi.org/10.1016/0167-9317(95)00213-8

Influence of high substrate doping levels on the threshold voltage and the mobility of deep-submicrometer MOSFETs

Autor: H. Lifka, M.J. van Dort, Pierre H. Woerlee, Andrew Jan Walker, Casper A. H. Juffermans

Publikováno v: IEEE Transactions on Electron Devices. 39:932-938

The high levels of substrate doping needed in deep-submicrometer MOS devices affect device properties strongly. The authors present a detailed experimental study of high-doping effects on the threshold voltage, which is shown to be affected by the qu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4045998247ea4e3a33e0cc7c7599230f
https://doi.org/10.1109/16.127485

A high-resolution study of two-dimensional oxidation-enhanced diffusion in silicon

Autor: M.J. van Dort, Jan W. Slotboom, Pierre H. Woerlee, H. Lifka, W.B. de Boer, P. C. Zalm, N. E. B. Cowern, Casper A. H. Juffermans, R.C.M. de Kruif, Andrew Jan Walker

Publikováno v: Proceedings of IEEE International Electron Devices Meeting.

A new method for the determination of two-dimensional oxidation-enhanced diffusion (OED) is presented. The resolution of the technique in the lateral direction is /spl sim/10 nm. The technique is used to study the influence of the gate reoxidation st

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::84056c028e2eb39de96a24324831b8b7
https://doi.org/10.1109/iedm.1993.347348