Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Caspar Leendertz"'
Publikováno v:
Solid State Phenomena. 255:331-337
Surface sensitive methods, UV-VIS spectral ellipsometry (SE), surface photovoltage (SPV) measurements, and X-ray photoelectron spectroscopy (XPS) measurements were combined to investigate in detail the Si substrate oxidation and resulting interface e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::786e2342d8a5bb4d0701b525adcc7662
https://doi.org/10.4028/www.scientific.net/ssp.255.331
https://doi.org/10.4028/www.scientific.net/ssp.255.331
Autor:
Lars Korte, Uta Stürzebecher, A. Laades, Liz Margarita Montañez, J A Töfflinger, Caspar Leendertz, Bernd Rech, Hans-Peter Sperlich
Publikováno v:
Solar Energy Materials and Solar Cells. 135:49-56
The negative charge formation, the charge-trapping mechanisms and the interface defect passivation of aluminum oxide/silicon nitride (AlO x /SiN x ) stacks deposited by plasma-enhanced chemical vapor deposition on p- type crystalline silicon (c-Si) a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f370bc7d83ad7cd1b2c7354456d21c71
https://doi.org/10.1016/j.solmat.2014.09.024
https://doi.org/10.1016/j.solmat.2014.09.024
Autor:
Lukáš Görög, Alexander Ulyashin, Juan P. Martínez-Pastor, Nils Petermann, Lars Korte, Said Agouram, J A Töfflinger, Hartmut Wiggers, Raúl García-Calzada, Caspar Leendertz, Vladimir S. Chirvony
Publikováno v:
physica status solidi (a). 212:156-161
The application of layers of doped colloidal silicon nanocrystals sandwiched between hydrogenated amorphous silicon layers as emitters in silicon heterojunction solar cells is explored. It is shown that such emitters provide excellent interface passi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b591a936d6f4996051f578bf461520a6
https://doi.org/10.1002/pssa.201431264
https://doi.org/10.1002/pssa.201431264
Publikováno v:
physica status solidi (RRL) - Rapid Research Letters. 8:831-835
Excellent passivation of black silicon surfaces by thin amorphous silicon layers deposited with plasma enhanced chemical vapor deposition is demonstrated. Minority charge carrier lifetimes of 1.3 milliseconds, enabling an implied open-circuit voltage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1b82d9be807cda53a8846ce3ac59c0a
https://doi.org/10.1002/pssr.201409327
https://doi.org/10.1002/pssr.201409327
Autor:
Liz Margarita Montañez, Hans-Peter Sperlich, Caspar Leendertz, A. Laades, J A Töfflinger, Lars Korte, Uta Stürzebecher, Bernd Rech
Publikováno v:
Energy Procedia. 55:845-854
The charge dynamics and the interface defect state density of AlOx/SiNx passivation stacks deposited by plasma-enhanced chemical vapor deposition (PECVD) on crystalline silicon (c-Si) wafers are investigated. High frequency (1 MHz) capacitance voltag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::875cf81b80f0c7233c4dc8eacbd825ed
https://doi.org/10.1016/j.egypro.2014.08.068
https://doi.org/10.1016/j.egypro.2014.08.068
Publikováno v:
Energy Procedia. 55:805-812
Subnanometer thin silicon oxide films, applied as interlayer between crystalline silicon absorbers and functional layers, have demonstrated to improve interface passivation properties. Here we compare the interface defect density as well as the fixed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c0457118c772c838b3a3a057c3f41ebb
https://doi.org/10.1016/j.egypro.2014.08.063
https://doi.org/10.1016/j.egypro.2014.08.063
Publikováno v:
Solar Energy Materials and Solar Cells. 117:152-160
A simple and fast 1D effective medium simulation model for polycrystalline silicon thin film solar cells was defined, by using the device simulator AFORS-HET. The model was calibrated with current–voltage measurements of solar cells under illuminat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b67cdcf1edb3cb5671b40f55b2a7f1d
https://doi.org/10.1016/j.solmat.2013.05.003
https://doi.org/10.1016/j.solmat.2013.05.003
Autor:
Esteban Pedrueza, J A Töfflinger, Juan P. Martínez-Pastor, Vladimir S. Chirvony, Rafael Abargues, Orman Gref, Raúl García-Calzada, Maurizio Roczen, Bernd Rech, Lars Korte, Caspar Leendertz
Publikováno v:
physica status solidi (a). 210:687-694
Light trapping enhancement by plasmonic-active metal nanoparticles (NPs) is believed to be a promising approach to increase silicon-based solar cell efficiency. Therefore, we investigated TiO2 films in situ doped by Au NPs (TiO2:AuNPs) deposited by s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0669d1f72c2614c543f199571f5e3f6
https://doi.org/10.1002/pssa.201200804
https://doi.org/10.1002/pssa.201200804
Publikováno v:
Energy Procedia. 38:677-683
In this study, different designs of contact schemes for back contact silicon heterojunction (BC-SHJ) solar cells are simulated and optimized using numerical device simulation in 2D and 3D for both stripe and point contacts. Unlike in conventional BC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cfdcbff6bb8c93a8d21cc95a0ab44f58
https://doi.org/10.1016/j.egypro.2013.07.332
https://doi.org/10.1016/j.egypro.2013.07.332
Autor:
Caspar Leendertz, A. Laades, Florian Ruske, Bernd Rech, Thomas Barthel, Enno Malguth, Lars Korte, Maurizio Roczen, Jose Ordeñez, J A Töfflinger, Martin Schade, Hartmut S. Leipner
Publikováno v:
physica status solidi (a). 210:676-681
The structural properties of crystalline Si nanodots embedded in a SiO2 matrix are investigated with respect to the exploitation of quantum confinement effects (QCE) in Si solar cells. The nanostructures are grown on crystalline Si (c-Si) wafers by d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f1e9eaf4e49d75b07237898cee13fd9
https://doi.org/10.1002/pssa.201200803
https://doi.org/10.1002/pssa.201200803