Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Caspar Hopfmann"'
Autor:
Dan Cogan, Oded Kenneth, Netanel H. Lindner, Giora Peniakov, Caspar Hopfmann, Dan Dalacu, Philip J. Poole, Pawel Hawrylak, David Gershoni
Publikováno v:
Physical Review X, Vol 11, Iss 1, p 019901 (2021)
Externí odkaz:
https://doaj.org/article/609054ea6a6a489ea5633fb034d56dd9
Autor:
Dan Cogan, Oded Kenneth, Netanel H. Lindner, Giora Peniakov, Caspar Hopfmann, Dan Dalacu, Philip J. Poole, Pawel Hawrylak, David Gershoni
Publikováno v:
Physical Review X, Vol 8, Iss 4, p 041050 (2018)
Quantum dots are arguably the best interface between matter spin qubits and flying photonic qubits. Using quantum dot devices to produce joint spin-photonic states requires the electronic spin qubits to be stored for extended times. Therefore, the st
Externí odkaz:
https://doaj.org/article/d6fb243aa3e7452daaa6c47089a044eb
Autor:
Peter Schnauber, Alexander Thoma, Christoph V. Heine, Alexander Schlehahn, Liron Gantz, Manuel Gschrey, Ronny Schmidt, Caspar Hopfmann, Benjamin Wohlfeil, Jan-Hindrick Schulze, André Strittmatter, Tobias Heindel, Sven Rodt, Ulrike Woggon, David Gershoni, Stephan Reitzenstein
Publikováno v:
Technologies, Vol 4, Iss 1, p 1 (2015)
We report on enhancing the photon-extraction efficiency (PEE) of deterministic quantum dot (QD) microlenses via anti-reflection (AR) coating. The AR-coating deposited on top of the curved microlens surface is composed of a thin layer of Ta2O5, and is
Externí odkaz:
https://doaj.org/article/4e537bc2b40a4973810bdc8c95467831
Autor:
Jingzhong Yang, Tom Fandrich, Frederik Benthin, Robert Keil, Nand Lal Sharma, Weijie Nie, Caspar Hopfmann, Oliver G. Schmidt, Michael Zopf, Fei Ding
Publikováno v:
Physical Review B 105 (2022), Nr. 11
Semiconductor-based emitters of pairwise photonic entanglement are a promising constituent of photonic quantum technologies. They are known for the ability to generate discrete photonic states on-demand with low multiphoton emission, near-unity entan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::064e4e08066a74facc97e5c70f0f3be3
Autor:
Weijie Nie, Nand Lal Sharma, Carmen Weigelt, Robert Keil, Jingzhong Yang, Fei Ding, Caspar Hopfmann, Oliver G. Schmidt
Publikováno v:
Applied Physics Letters. 119:244003
Autor:
Caspar Hopfmann, Anna Musiał, Sebastian Maier, Monika Emmerling, Christian Schneider, Sven Höfling, Martin Kamp, Stephan Reitzenstein
Publikováno v:
Semiconductor Science & Technology; Sep2016, Vol. 31 Issue 9, p1-1, 1p