Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Caspar H. van der Wal"'
Autor:
Jorge Quereda, Jan Hidding, Talieh S. Ghiasi, Bart J. van Wees, Caspar H. van der Wal, Marcos H. D. Guimarães
Publikováno v:
npj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-7 (2021)
Abstract Circular photocurrents (CPC), namely circular photogalvanic (CPGE) and photon drag effects, have recently been reported both in monolayer and multilayer transition metal dichalcogenide (TMD) phototransistors. However, the underlying physics
Externí odkaz:
https://doaj.org/article/7946b99eedd74ee0b6696669c1fa57ab
Autor:
Jorge Quereda, Talieh S. Ghiasi, Jhih-Shih You, Jeroen van den Brink, Bart J. van Wees, Caspar H. van der Wal
Publikováno v:
Nature Communications, Vol 9, Iss 1, Pp 1-8 (2018)
Circular photocurrents emerge in atomically thin transition metal dichalcogenides as a result of circular photogalvanic and photon drag effects. Here, the authors identify two different circular photocurrent contributions in monolater MoSe2, dominant
Externí odkaz:
https://doaj.org/article/ed6e9acbc4b940c5afda4c5ed2c305dc
Autor:
Rafael R Rojas-Lopez, Freddie Hendriks, Caspar H van der Wal, Paulo S S Guimarães, Marcos H D Guimarães
Publikováno v:
2D Materials. 10(3)
Semiconductor transition metal dichalcogenides (TMDs) have equivalent dynamics for their two spin/valley species. This arises from their energy-degenerated spin states, connected via time-reversal symmetry. When an out-of-plane magnetic field is appl
Hyperfine-mediated transitions between electronic spin-1/2 levels of transition metal defects in SiC
Publikováno v:
New Journal of Physics, Vol 23, Iss 8, p 083010 (2021)
Transition metal defects in SiC give rise to localized electronic states that can be optically addressed in the telecom range in an industrially mature semiconductor platform. This has led to intense scrutiny of the spin and optical properties of the
Externí odkaz:
https://doaj.org/article/ead64591368447fea1e76c5f94632fb3
Autor:
Carmem M Gilardoni, Tom Bosma, Danny van Hien, Freddie Hendriks, Björn Magnusson, Alexandre Ellison, Ivan G Ivanov, N T Son, Caspar H van der Wal
Publikováno v:
New Journal of Physics, Vol 22, Iss 10, p 103051 (2020)
Spin-active color centers in solids show good performance for quantum technologies. Several transition-metal defects in SiC offer compatibility with telecom and semiconductor industries. However, whether their strong spin–orbit coupling degrades th
Externí odkaz:
https://doaj.org/article/648ec6051fb14f60926c4fe391d116ed
Autor:
Olger V. Zwier, Tom Bosma, Carmem M. Gilardoni, Xu Yang, Alexander R. Onur, Takeshi Ohshima, Nguyen T. Son, Caspar H. van der Wal
Publikováno v:
Journal of Applied Physics, 131:094401. AMER INST PHYSICS
Electromagnetically induced transparency (EIT) is a phenomenon that can provide strong and robust interfacing between optical signals and quantum coherence of electronic spins. In its archetypical form, mainly explored with atomic media, it uses a (n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::592b16f20be767dbc001b4539efbf101
Hyperfine-mediated transitions between electronic spin-1/2 levels of transition metal defects in SiC
Publikováno v:
New Journal of Physics, 23:083010. IOP PUBLISHING LTD
Transition metal defects in SiC give rise to localized electronic states that can be optically addressed in the telecom range in an industrially mature semiconductor platform. This has led to intense scrutiny of the spin and optical properties of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cf7a93aeae9924a838fb2b3a6e4a3640
https://research.rug.nl/en/publications/b350a822-11f1-4b0d-9c04-1f39678cb51d
https://research.rug.nl/en/publications/b350a822-11f1-4b0d-9c04-1f39678cb51d
Publikováno v:
Physical Review. B: Condensed Matter and Materials Physics, 103(11):115410. AMER PHYSICAL SOC
Transition metal dichalcogenides (TMDs) combine interesting optical and spintronic properties in an atomically-thin material, where the light polarization can be used to control the spin and valley degrees-of-freedom for the development of novel opto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f25a57047f0f642f3b0f152889ac4a91
Autor:
Marcos H. D. Guimarães, Talieh S. Ghiasi, Bart J. van Wees, Caspar H. van der Wal, Jorge Quereda, Jan Hidding
Publikováno v:
npj 2D Materials and Applications
Npj 2d materials and applications, 5(1):13. SPRINGERNATURE
npj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-7 (2021)
Npj 2d materials and applications, 5(1):13. SPRINGERNATURE
npj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-7 (2021)
Circular photocurrents (CPC), namely circular photogalvanic (CPGE) and photon drag effects, have recently been reported both in monolayer and multilayer transition metal dichalcogenide (TMD) phototransistors. However, the underlying physics for the e
Publikováno v:
Nano Letters
Nano Letters, 20(8), 6148-6154. AMER CHEMICAL SOC
ArXiv. Cornell University Press
Nano Letters, 20(8), 6148-6154. AMER CHEMICAL SOC
ArXiv. Cornell University Press
Central to spintronics is the interconversion between electronic charge and spin currents, and this can arise from the chirality-induced spin selectivity (CISS) effect. CISS is often studied as magnetoresistance (MR) in two-terminal (2T) electronic n