Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Casey Holder"'
Autor:
Shuji Nakamura, Casey Holder, James S. Speck, Steven P. DenBaars, Matthew T. Hardy, Daniel A. Cohen
Publikováno v:
CLEO: 2013.
Non-epitaxial cladding layers have advantages for green laser diodes in terms of reduced p-cladding resistance and reduced active region thermal damage. We demonstrate true green semipolar InGaN/GaN laser diodes with ITO cladding grown on semipolar G
Autor:
Daniel A. Haeger, Casey Holder, Shuji Nakamura, Kenji Fujito, Robert M. Farrell, James S. Speck, Po Shan Hsu, Daniel A. Cohen, Steven P. DenBaars, Kathryn M. Kelchner
Publikováno v:
69th Device Research Conference.
We have previously demonstrated the AlGaN-cladding-free (ACF) laser diode (LD) concept over a wide visible spectral range and various nonpolar/semipolar crystallographic orientations. The benefits of this ACF epitaxial design include lower operating
Autor:
S. P. DenBaars, Shuji Nakamura, Casey Holder, James S. Speck, Robert M. Farrell, Benjamin P. Yonkee, Daniel F. Feezell, John T. Leonard, Daniel A. Cohen
Publikováno v:
Applied Physics Letters. 105:089902
Autor:
Casey Holder, Daniel A. Cohen, Steven P. DenBaars, Benjamin P. Yonkee, James S. Speck, Daniel F. Feezell, Shuji Nakamura, John T. Leonard, Robert M. Farrell
Publikováno v:
Applied Physics Letters. 105:031111
Photoelectrochemical (PEC) band gap selective undercut etching is discussed as an alternative technique to chemical-mechanical polishing and laser-lift off for substrate removal for III-nitride vertical-cavity surface-emitting lasers (VCSELs). A top-
Autor:
Daniel F. Feezell, Steven P. DenBaars, Daniel A. Cohen, James S. Speck, Casey Holder, Shuji Nakamura, Matthew T. Hardy
Publikováno v:
Applied Physics Letters. 103:081103
Replacing a portion of the upper III-nitride cladding with indium-tin-oxide (ITO) has several potential advantages for GaN-based laser diodes (LDs). For green LDs, use of ITO in the waveguide structure reduces the epitaxial p-cladding thickness and g
Publikováno v:
Applied Physics Express. 5:092104
Nonpolar and semipolar orientations of gallium nitride offer several advantages for vertical-cavity surface-emitting lasers (VCSELs), including enhanced radiative efficiencies and higher optical gain compared to c-plane oriented VCSELs. Additionally,
Autor:
Po Shan Hsu, Kathryn M. Kelchner, Daniel A. Cohen, Casey Holder, Anurag Tyagi, James S. Speck, Matthew T. Hardy, M. Robert Farrell, Hiroaki Ohta, Steven P. DenBaars, Shuji Nakamura, Chia-Yen Huang, Kenji Fujito, Daniel A. Haeger
Publikováno v:
Applied Physics Express. 3:011002
We demonstrate electrically driven InGaN based laser diodes (LDs), with a simple AlGaN-cladding-free epitaxial structure, grown on semipolar (2021) GaN substrates. The devices employed In0.06Ga0.94N waveguiding layers to provide transverse optical mo