Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Casey H. Rice"'
Autor:
Casey H. Rice, J. David Ingalls, Casey C. Hedge, Ken Bole, Holly Bradley, Ethan Johnson, Brian D. Olson, James Staggs, Patrick L. Cole, Adam R. Duncan, Sarah E. Armstrong, W.M. Shedd
Publikováno v:
2015 IEEE Radiation Effects Data Workshop (REDW).
Commercial gallium nitride (GaN) high-electron mobility transistors (HEMTs) are tested in the radio frequency (RF) spectrum at heavy ion facilities to explore space environment stresses on these emerging technologies. Findings indicate that gate leak
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b4b39376d08a21b5b2ae4c2d2d37707e
https://doi.org/10.1109/redw.2015.7336715
https://doi.org/10.1109/redw.2015.7336715
Autor:
Casey H. Rice, Brian D. Olson, Casey C. Hedge, J. David Ingalls, Adam R. Duncan, Patrick L. Cole, Sarah E. Armstrong
Publikováno v:
2015 IEEE Radiation Effects Data Workshop (REDW).
Commercial gallium nitride high-electron mobility transistors are tested at Texas A&M University cyclotron. Degradation of gate and drain currents is characterized.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::181a52f90e8715d348cde667f74d482f
https://doi.org/10.1109/redw.2015.7336720
https://doi.org/10.1109/redw.2015.7336720