Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Casey C. Burkhart"'
Autor:
Jennifer Pagan, Edward B. Stokes, Michael D. Hodge, Kinnari Patel, Paolo Batoni, Casey C. Burkhart
Publikováno v:
ECS Transactions. 11:203-208
In this paper, we present a model that can be used to determine semiconductor material parameters for metal-semiconductor contacts with non-linear voltage-current (V-I) characteristics. The model uses the Circular Transmission Line Model (CTLM) appro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8aafaebb7d47747a025072d2403d17a
https://doi.org/10.1149/1.2783873
https://doi.org/10.1149/1.2783873
Autor:
Stephen M. Bobbio, Casey C. Burkhart, Edward B. Stokes, Mike Ahrens, Vikram V. Iyengar, Paolo Batoni, Trushant K. Shah, S. T. Morton, Kinnari Patel
Publikováno v:
Journal of Electronic Materials. 36:1166-1173
In this work we report on the magnetron reactive ion etch (MRIE) technology for gallium nitride (GaN) and aluminum gallium nitride (Al x Ga1−x N) using dichlorodifluoromethane (CCl2F2), commonly known as halocarbon 12, with etch rates greater than
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f35cf7a2a2febe329d3e8ab50f6e298
https://doi.org/10.1007/s11664-007-0199-0
https://doi.org/10.1007/s11664-007-0199-0
Publikováno v:
ECS Transactions. 3:457-462
In this work we present preliminary results of MOCVD grown n- GaN and MBE grown p-GaN p-n junctions on a sapphire substrate, with and without II-IV active layers. Circular transmission line method (CTLM) test structures were used to measure sheet res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16863a23e55f39ac94edf9434e486cc8
https://doi.org/10.1149/1.2357237
https://doi.org/10.1149/1.2357237
Publikováno v:
ECS Transactions. 3:469-475
The objective of our current work is to observe the effects of MBE p-GaN growth over II-VI semiconductor nanocrystals on an MOCVD n-GaN template. The starting material was approximately 2 microns of n-type GaN MOCVD material atop a sapphire wafer. Cd
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c185b84d50f6651d7bd2c65904223d3
https://doi.org/10.1149/1.2357239
https://doi.org/10.1149/1.2357239
Autor:
Mark O’Steen, Jennifer Pagan, Kinnari Patel, Philip T. Barletta, Michael T. Ahrens, Casey C. Burkhart, Edward B. Stokes
Publikováno v:
Solid-State Electronics. 50:1461-1465
In this paper the preliminary results of incorporating a novel active layer into a GaN light emitting diode (LED) are discussed. Integration of colloidal CdSe quantum dots into a GaN LED active layer is demonstrated. Properties of p-type Mg doped ove
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ce231624d02f2f5406577387ba7d76c
https://doi.org/10.1016/j.sse.2006.06.009
https://doi.org/10.1016/j.sse.2006.06.009
Publikováno v:
MRS Proceedings. 891
In this paper the preliminary results of incorporating a novel active layer into a GaN light emitting diode (LED) are discussed. Integration of colloidal CdSe quantum dots into a GaN LED active layer is demonstrated. The conductivity of the overgrowt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eec2f82fb62ffbc87dfe263a41b4b47c
https://doi.org/10.1557/proc-0891-ee03-06
https://doi.org/10.1557/proc-0891-ee03-06
Publikováno v:
ECS Meeting Abstracts. :388-388
CdSe semiconductor quantum dots have received an enormous amount of attention due to their intense luminescent properties in the middle of the visible spectrum, By attempting to emulate the quantum confinement properties of the successful GaN/InGaN b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::589461cf1b5a4e5bd33e7963ead0e889
https://doi.org/10.1149/ma2008-02/2/388
https://doi.org/10.1149/ma2008-02/2/388
Publikováno v:
ECS Meeting Abstracts. :1337-1337
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c41e2657af18e24fb70b79d9fa2c48d
https://doi.org/10.1149/ma2007-02/26/1337
https://doi.org/10.1149/ma2007-02/26/1337
Publikováno v:
ECS Meeting Abstracts. :1332-1332
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc137cad271eaaeb04499345a6752315
https://doi.org/10.1149/ma2007-02/26/1332
https://doi.org/10.1149/ma2007-02/26/1332
Publikováno v:
ECS Meeting Abstracts. :1305-1305
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16f242c341a0611393fda389d2e36d21
https://doi.org/10.1149/ma2006-02/28/1305
https://doi.org/10.1149/ma2006-02/28/1305