A 20 MB/s data rate 2.5 V flash memory with current-controlled field erasing for 1 M cycle endurance.

Autor: Dallabora, M., Villa, C., Caser, F.T., Schippers, S., Sali, M., Ortolani, G., Geraci, A., Defendi, M., Cane, M., Bettini, L., Bartoli, S., Cantarelli, D., Bez, R.

Publikováno v: 1997 IEEE International Solids-State Circuits Conference Digest of Technical Papers; 1997, p396-397, 2p