Zobrazeno 1 - 10
of 887
pro vyhledávání: '"Casamento A"'
Autor:
Nguyen, Thai-Son, Pieczulewsi, Naomi, Savant, Chandrashekhar, Cooper, Joshua J. P., Casamento, Joseph, Goldman, Rachel S., Muller, David A., Xing, Huili G., Jena, Debdeep
AlScN is a new wide bandgap, high-k, ferroelectric material for RF, memory, and power applications. Successful integration of high quality AlScN with GaN in epitaxial layer stacks depends strongly on the ability to control lattice parameters and surf
Externí odkaz:
http://arxiv.org/abs/2410.09153
Autor:
Savant, Chandrashekhar, Gund, Ved, Nomoto, Kazuki, Maeda, Takuya, Jadhav, Shubham, Lee, Joongwon, Ramesh, Madhav, Kim, Eungkyun, Nguyen, Thai-Son, Chen, Yu-Hsin, Casamento, Joseph, Rana, Farhan, Lal, Amit, Huili, Xing, Jena, Debdeep
We report the properties of molecular beam epitaxy deposited AlBN thin films on a recently developed epitaxial nitride metal electrode Nb2N. While a control AlN thin film exhibits standard capacitive behavior, distinct ferroelectric switching is obse
Externí odkaz:
http://arxiv.org/abs/2407.09740
Autor:
Spurling, R. Jackson, Almishal, Saeed S. I., Casamento, Joseph, Hayden, John, Spangler, Ryan, Marakovits, Michael, Hossain, Arafat, Lanagan, Michael, Maria, Jon-Paul
We report on the structure and dielectric properties of ternary A6B2O17 (A = Zr; B = Nb, Ta) thin films and ceramics. Thin films are produced via sputter deposition from dense, phase-homogenous bulk ceramic targets, which are synthesized through a re
Externí odkaz:
http://arxiv.org/abs/2405.03527
We demonstrate epitaxial lattice-matched Al$_{0.89}$Sc$_{0.11}$N/GaN ten and twenty period distributed Bragg reflectors (DBRs) grown on c-plane bulk n-type GaN substrates by plasma-enhanced molecular beam epitaxy (PA-MBE). Resulting from a rapid incr
Externí odkaz:
http://arxiv.org/abs/2309.16551
Autor:
Liu, Yongtao, Ievlev, Anton, Casamento, Joseph, Hayden, John, Trolier-McKinstry, Susan, Maria, Jon-Paul, Kalinin, Sergei V., Kelley, Kyle P.
Polarization dynamics and domain structure evolution in ferroelectric Al$_{0.93}$B$_{0.07}$N are studied using piezoresponse force microscopy and spectroscopies in ambient and controlled atmosphere environments. The application of negative unipolar,
Externí odkaz:
http://arxiv.org/abs/2307.03617
Autor:
Casamento, J., Nomoto, K., Nguyen, T. S., Lee, H., Savant, C., Li, L., Hickman, A., Maeda, T., Encomendero, J., Gund, V., Lal, A., Hwang, J. C. M., Xing, H. G., Jena, D.
Publikováno v:
IEEE IEDM Technical Digest, December 2022
We report the first observation of ferroelectric gating in AlScN barrier wide-bandgap nitride transistors. These FerroHEMT devices realized by direct epitaxial growth represent a new class of ferroelectric transistors in which the semiconductor is it
Externí odkaz:
http://arxiv.org/abs/2302.14209
Autor:
Thai-Son Nguyen, Naomi Pieczulewski, Chandrashekhar Savant, Joshua J. P. Cooper, Joseph Casamento, Rachel S. Goldman, David A. Muller, Huili G. Xing, Debdeep Jena
Publikováno v:
APL Materials, Vol 12, Iss 10, Pp 101117-101117-10 (2024)
AlScN is a new wide bandgap, high-k, ferroelectric material for radio frequency (RF), memory, and power applications. Successful integration of high-quality AlScN with GaN in epitaxial layer stacks depends strongly on the ability to control lattice p
Externí odkaz:
https://doaj.org/article/35e6301e9de54b63a1a0e18ae26ed9e3
Autor:
Gustavo A. Alvarez, Joseph Casamento, Len van Deurzen, Md Irfan Khan, Kamruzzaman Khan, Eugene Jeong, Elaheh Ahmadi, Huili Grace Xing, Debdeep Jena, Zhiting Tian
Publikováno v:
Materials Research Letters, Vol 11, Iss 12, Pp 1048-1054 (2023)
Aluminum scandium nitride (AlScN) has been receiving increasing interest for radio frequency microelectromechanical systems because of their higher achievable bandwidths owing to the larger piezoelectric response of AlScN compared to AlN. However, al
Externí odkaz:
https://doaj.org/article/4f7bbb5068eb4f9daec888d0e1761253
Publikováno v:
Children, Vol 11, Iss 9, p 1116 (2024)
Background: Limited research exists for use of transcutaneous spinal stimulation (TSS) in pediatric spinal cord injuries (SCI) to improve walking outcomes, especially in children diagnosed with SCI secondary to acute flaccid myelitis (AFM). Objective
Externí odkaz:
https://doaj.org/article/2f2bc23581df42fa8b6431415dec807b
Autor:
Casamento, Joseph, Lee, Hyunjea, Maeda, Takuya, Gund, Ved, Nomoto, Kazuki, van Deurzen, Len, Lal, Amit, Huili, Xing, Jena, Debdeep
Epitaxial Sc$_x$Al$_{1-x}$N thin films of ~100 nm thickness grown on metal polar GaN exhibit significantly enhanced relative dielectric permittivity ($\epsilon_r$) values relative to AlN. $\epsilon_r$ values of ~17 to 21 for Sc contents of 17 to 25%
Externí odkaz:
http://arxiv.org/abs/2110.14679