Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Carsten Setzer"'
Publikováno v:
European endodontic journal. 6(3)
To compare the shaping ability of the XP-endo Shaper (XPS) system to the ProTaper Next (PTN) system in oval-shaped distal root canals.From 12 mandibular molars, distal roots with moderately curved single oval canals were randomly assorted to be instr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::8c1cb60eb1400a17d0abc245f5a5942d
https://pubmed.ncbi.nlm.nih.gov/34967337
https://pubmed.ncbi.nlm.nih.gov/34967337
Publikováno v:
Applied Surface Science. 166:173-178
In this contribution, an overview of the research work in our group on the GaAs(112), (113) and (114) surfaces is presented. Samples were prepared by molecular beam epitaxy (MBE) and analyzed in situ by low-energy electron diffraction (LEED), core le
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c51868b093f53b5e1f5e3d34e4602b0
https://doi.org/10.1016/s0169-4332(00)00403-7
https://doi.org/10.1016/s0169-4332(00)00403-7
Publikováno v:
physica status solidi (b). 218:329-364
The GaAs(001), (110), (111)A, (111)B, (112)A, (112)B, (113) A, (113)B, (114)A and (114)B surfaces were prepared by molecular-beam epitaxy (MBE) and analyzed in situ by photoelectron spectroscopy of the Ga and As 3d core levels using synchrotron radia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99bbaf1cc2c1523be814960b8001d9db
https://doi.org/10.1002/1521-3951(200004)218:2<329::aid-pssb329>3.0.co
https://doi.org/10.1002/1521-3951(200004)218:2<329::aid-pssb329>3.0.co
Publikováno v:
Review of Scientific Instruments
A compact ultrahigh vacuum (UHV) system has been built to study growth and properties of III/V semiconductor surfaces and nanostructures. The system allows one to grow III/V semiconductor surfaces by molecular beam epitaxy (MBE) and analyze their sur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c17bf914e410d12903452488c894aaf3
https://doi.org/10.1063/1.1150232
https://doi.org/10.1063/1.1150232
Autor:
L. Geelhaar, Carsten Setzer, Jutta Platen, Wolfgang Richter, C. Meyne, Matthias Scheffler, Paolo Ruggerone, J. Maárquez, Karl Jacobi, Alexander Kley
Publikováno v:
Surface Science
The GaAs(112)A and (112)B surfaces have been prepared by molecular-beam epitaxy (MBE) and analyzed in situ by low-energy electron diffraction (LEED) and surface core-level spectroscopy of the Ga 3d and As 3d core levels using synchrotron radiation. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a796003e63d823d6094783c01d832123
https://doi.org/10.1016/s0039-6028(99)00713-x
https://doi.org/10.1016/s0039-6028(99)00713-x
Publikováno v:
Journal of Applied Physics
Scopus-Elsevier
Scopus-Elsevier
Results of a combined experimental and theoretical study are presented. GaAs{113} and {112} surfaces have been prepared by molecular beam epitaxy and analyzed in situ by low-energy electron diffraction and ex situ by atomic-force microscopy. The expe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e0582005994f583e81eb8b48b9200a45
https://doi.org/10.1063/1.369720
https://doi.org/10.1063/1.369720
Publikováno v:
Surface Science. 419:291-302
The GaAs (113)A and ( 1 1 3 )B surfaces were prepared by molecular beam epitaxy (MBE) and ion bombardment and annealing (IBA). The surfaces were investigated in situ by means of low-energy electron diffraction and surface core-level (SCL) spectroscop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5ae7b730918d4c326eb86cc1d661097
https://doi.org/10.1016/s0039-6028(98)00807-3
https://doi.org/10.1016/s0039-6028(98)00807-3
Autor:
Jörg-Th. Zettler, T. Wehnert, Markus Pristovsek, Jutta Platen, Housni Menhal, Carsten Setzer, Karl Jacobi, T. Schmidtling, Wolfgang Richter, Norbert Esser
Publikováno v:
Journal of Crystal Growth. 195:1-5
We investigated GaAs (1 1 3) surfaces prepared by molecular beam epitaxy (MBE) and metal-organic vapour phase epitaxy (MOVPE) with reflectance anisotropy spectroscopy (RAS) and low energy electron diffraction (LEED) and found two different static (no
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c11c6b2da3a553346ee3c05dee9ff4ef
https://doi.org/10.1016/s0022-0248(98)00695-2
https://doi.org/10.1016/s0022-0248(98)00695-2
Publikováno v:
Surface Science. :782-785
Using a recently developed MBE apparatus, the GaAs ( 1 1 1 ) B(2×2) surface was prepared and studied in situ by photoemission and LEED intensity analysis. The measured surface core level shifts of the Ga and As 3d core levels support the atomic geom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e2f86acb7e612414c58e63ee082356f
https://doi.org/10.1016/s0039-6028(97)01060-1
https://doi.org/10.1016/s0039-6028(97)01060-1
Publikováno v:
Journal of Materials Science Materials in Electronics. 9:115-119
We discuss scanning electron micrographs and atomic force microscope images of thermally etched GaAs(1 1 3) surfaces. The GaAs(1 1 3)A and GaAs(1 1 3)B surfaces are compared. The polarity of the surface leads to a different morphology for the two sur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e4f8dfe341ec9829706cb0cedcc0ad3
https://doi.org/10.1023/a:1008857321897
https://doi.org/10.1023/a:1008857321897