Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Carsten Schäffer"'
Autor:
Carsten Schäffer, Frank Umbach, Nicolas Heuck, Holger Schulze, Martin Kerber, Daniel Bolowski, Karsten Guth, Frank Hille, Alexander Ciliox, Roman Roth, K. Rott
Publikováno v:
Microelectronics Reliability. 64:393-402
The introduction of thick copper metallization and topside interconnects as well as a superior die attach technology is improving the performance and reliability of IGBT power transistor technologies significantly. The much higher specific heat capac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40542cd70c27a59476792e683193e9e6
https://doi.org/10.1016/j.microrel.2016.07.119
https://doi.org/10.1016/j.microrel.2016.07.119
Autor:
Herbert Danninger, Herbert Hutter, Carsten Schäffer, Oliver Humbel, Michael Fugger, Mathias Plappert, Mathias Nowottnick
Publikováno v:
Microelectronics Reliability. 54:2487-2493
The thermal stability of WTi and WTi(N) as diffusion barriers for Al and Cu metallization on Si (1 0 0) was investigated by time of flight secondary ion mass spectrometry (ToF-SIMS) depth profiling, X-ray diffraction (XRD), electron microscopy (SEM a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d7d3475ed6f0682b31216cf54414eb7
https://doi.org/10.1016/j.microrel.2014.04.016
https://doi.org/10.1016/j.microrel.2014.04.016
Autor:
Frank Umbach, G. Mertens, H.-J. Schulze, D. Bolowski, Frank Hille, N. Rohn, Carsten Schäffer, Roman Roth
Publikováno v:
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
A novel power Cu front side chip metallization for insulated-gate bipolar transistors (IGBTs) and freewheeling diodes (FWDs) enabling thick Cu wire wedge bonding on active area is reported. In the continuing race to higher power density, main limitat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ad7d23af001dfc4827b9e2bd2f9a747
https://doi.org/10.1109/ispsd.2016.7520811
https://doi.org/10.1109/ispsd.2016.7520811
Autor:
H.-J. Schulze, Werner Schustereder, Hans-Joachim Schulze, Franz Josef Niedernostheide, Frank Hille, Carsten Schäffer, Manfred Pfaffenlehner, Hans-Peter Felsl, Johannes Georg Laven
Publikováno v:
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Hydrogen-related donors can be formed by using only a moderate thermal budget, so that this process can be used to create field-stop layers in thin power devices. The electrical characteristics of 1200 V IGBTs and diodes provided with such field-stop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ee1a04d0b03c64368d0a98c037ef827
https://doi.org/10.1109/ispsd.2016.7520850
https://doi.org/10.1109/ispsd.2016.7520850
Autor:
Th. Schmidt, M. Loddenkotter, M. Munzer, Th. Laska, M. Hierholzer, Frank Dieter Pfirsch, Carsten Schäffer
Publikováno v:
Conference Record of the 1999 IEEE Industry Applications Conference. Thirty-Forth IAS Annual Meeting (Cat. No.99CH36370).
IGBT-modules are the most frequently used semiconductors for power applications. The markets demand for higher power integration in one module is limited by the chip losses and the housings capability to dissipate this power. With the 3/sup rd/ gener
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1305e198d7899f159365e167ade69a2
https://doi.org/10.1109/ias.1999.805982
https://doi.org/10.1109/ias.1999.805982
Publikováno v:
Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212).
In this paper, the authors discuss the design of a new 1200 V trench IGBT structure. The combination of well-designed trench cell geometry and a favourably adjusted vertical carrier concentration profile leads to a trench IGBT chip with both low stat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bad33daf1165cbc7c4075a4dcabbb80
https://doi.org/10.1109/ispsd.1998.702738
https://doi.org/10.1109/ispsd.1998.702738