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pro vyhledávání: '"Carroll, M P"'
Akademický článek
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Akademický článek
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Autor:
Curry, M. J., Rudolph, M., England, T. D., Mounce, A. M., Jock, R. M., Bureau-Oxton, C., Harvey-Collard, P., Sharma, P. A., Anderson, J. M., Campbell, D. M., Wendt, J. R., Ward, D. R., Carr, S. M., Lilly, M. P., Carroll, M. S.
High-fidelity single-shot readout of spin qubits requires distinguishing states much faster than the T1 time of the spin state. One approach to improving readout fidelity and bandwidth (BW) is cryogenic amplification, where the signal from the qubit
Externí odkaz:
http://arxiv.org/abs/1901.04570
Autor:
Arzilli, Fabio, Fabbrizio, Alessandro, Schmidt, M. W., Petrelli, Maurizio, Maimaiti, M, Dingwell, D. B., Paris, E., Burton, M., Carroll, M.
We present new experimental data on major and trace element partition coefficients between alkali feldspar and trachytic melt. Experiments were conducted at 500 MPa, 870 890 {\deg}C to investigate through short disequilibrium and long near equilibriu
Externí odkaz:
http://arxiv.org/abs/1812.10276
Autor:
Pacheco, J. L., Singh, M., Perry, D. L., Wendt, J. R., Eyck, G. Ten, Manginell, R. P., Pluym, T., Luhman, D. R., Lilly, M. P., Carroll, M. S., Bielejec, E.
We demonstrate a capability of deterministic doping at the single atom level using a combination of direct write focused ion beam and solid-state ion detectors. The focused ion beam system can position a single ion to within 35 nm of a targeted locat
Externí odkaz:
http://arxiv.org/abs/1711.00792
Autor:
Bussmann, E., Gamble, John King, Koepke, J. C., Laroche, D., Huang, S. H., Chuang, Y., Li, J. -Y., Liu, C. W., Swartzentruber, B. S., Lilly, M. P., Carroll, M. S., Lu, T. -M.
Publikováno v:
Phys. Rev. Materials 2, 066004 (2018)
As a first step to porting scanning tunneling microscopy methods of atomic-precision fabrication to a strained-Si/SiGe platform, we demonstrate post-growth P atomic-layer doping of SiGe heterostructures. To preserve the substrate structure and elasti
Externí odkaz:
http://arxiv.org/abs/1710.06449
Autor:
Rochette, S., Rudolph, M., Roy, A. -M., Curry, M., Eyck, G. Ten, Manginell, R., Wendt, J., Pluym, T., Carr, S. M., Ward, D., Lilly, M. P., Carroll, M. S., Pioro-Ladrière, M.
Publikováno v:
Appl. Phys. Lett. 114, 083101 (2019)
We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separated spatially by a gap, one gate forming a reservoir and the other a
Externí odkaz:
http://arxiv.org/abs/1707.03895
Autor:
Yitamben, E. N., Butera, R. E., Swartzentruber, B. S., Simonson, R. J., Misra, S., Carroll, M. S., Bussmann, E.
Using scanning tunneling microscopy (STM), we investigate oxide-induced growth pits in Si thin films deposited by molecular beam epitaxy. In the transition temperature range from 2D adatom islanding to step-flow growth, systematic controlled air leak
Externí odkaz:
http://arxiv.org/abs/1706.05127
Autor:
Rudolph, M., Harvey-Collard, P., Jock, R., Jacobson, N. T., Wendt, J., Pluym, T., Dominguez, J., Ten-Eyck, G., Manginell, R., Lilly, M. P., Carroll, M. S.
Publikováno v:
in 2016 IEEE International Electron Devices Meeting (IEDM) (2016) pp. 34.1.1-34.1.4
Si-MOS based QD qubits are attractive due to their similarity to the current semiconductor industry. We introduce a highly tunable MOS foundry compatible qubit design that couples an electrostatic quantum dot (QD) with an implanted donor. We show for
Externí odkaz:
http://arxiv.org/abs/1705.05887
Autor:
Shirkhorshidian, A., Gamble, John King, Maurer, L., Carr, S. M., Dominguez, J., Eyck, G. A. Ten, Wendt, J. R., Nielsen, E., Jacobson, N. T., Lilly, M. P., Carroll, M. S.
Publikováno v:
Phys. Rev. Applied 10, 044003 (2018)
Despite their ubiquity in nanoscale electronic devices, the physics of tunnel barriers has not been developed to the extent necessary for the engineering of devices in the few-electron regime. This problem is of urgent interest, as this is the precis
Externí odkaz:
http://arxiv.org/abs/1705.01183