Zobrazeno 1 - 10
of 3 590
pro vyhledávání: '"Carrier injection"'
Autor:
Tae-Hyun Kil, Ju-Won Yeon, Hyo-Jun Park, Moon-Kwon Lee, Eui-Cheol Yun, Min-Woo Kim, Sang-Min Kang, Jun-Young Park
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 1030-1033 (2024)
In this study, low-temperature deuterium annealing (LTDA) at 300 °C is proposed to enhance both the performance and reliability of silicon-based high-k metal gate (HKMG) MOSFETs. A comparative study with hydrogen (H2) annealing under identical condi
Externí odkaz:
https://doaj.org/article/e5445f0aec104a1a8d3c76b41220648b
Publikováno v:
IEEE Open Journal of Circuits and Systems, Vol 5, Pp 341-348 (2024)
Counterfeit electronic components are known to enter supply chains through recycling, with these already-aged components creating serious reliability risks, particularly for critical infrastructure systems. A number of recycled integrated circuit (IC
Externí odkaz:
https://doaj.org/article/60c2c913c6fb44dc9253aba41c42289a
Autor:
Shaoxin Yu, Rongsheng Chen, Weiheng Shao, Weiming Yu, Xiaoyan Zhao, Zheng Chen, Weizhong Shan, Jenhao Cheng
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 605-612 (2024)
In this paper, a high-performance and low-HCI (Hot carrier injection) degradation LDMOS (Lateral double diffused metal oxide semiconductor) device is introduced. It consists of an additional mini LOCOS (Local oxidation of silicon) field plate combine
Externí odkaz:
https://doaj.org/article/c7d458f0e03243b2bc0ac24cfd9d64e1
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 281-288 (2024)
This paper presents a machine-learning-based approach for the degradation modeling of hot carrier injection in metal-oxide-semiconductor field-effect transistors (MOSFETs). Stress measurement data have been employed at various stress conditions of bo
Externí odkaz:
https://doaj.org/article/42728040a3d64e968f403d6a587a2a49
Autor:
Tianqi Zhang, Fangqing Zhao, Pai Liu, Yangzhi Tan, Xiangtian Xiao, Zhaojin Wang, Weigao Wang, Dan Wu, Xiao Wei Sun, Jianhua Hao, Guichuan Xing, Kai Wang
Publikováno v:
Advanced Photonics Research, Vol 4, Iss 11, Pp n/a-n/a (2023)
Indium phosphide (InP) quantum‐dot light‐emitting diodes (QLEDs) are considered as one of the most promising candidates for emerging displays owing to their good luminous performance and environmentally friendly properties. The operation of green
Externí odkaz:
https://doaj.org/article/9f768c376a02418a9c816faf40c4a2d5
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 179-189 (2023)
The integration density of electronic systems is limited by the reliability of the integrated circuits. To guarantee the overall performance, the integrated circuit reliability must be modeled and analyzed at the early design stage. This paper review
Externí odkaz:
https://doaj.org/article/76ff7c673f024195b26807e202ddedf7
Publikováno v:
IEEE Access, Vol 11, Pp 21417-21426 (2023)
The design of countermeasures against integrated circuit counterfeit recycling requires the ability to simulate aging in CMOS devices. Electronic design automation tools commonly provide this ability; however, their models must be tuned for use with
Externí odkaz:
https://doaj.org/article/325b13cdc031482593e03939c59c22ad
Publikováno v:
IEEE Access, Vol 11, Pp 14943-14950 (2023)
The hot carrier injection (HCI) of tunnel field-effect transistors (TFETs) is analyzed quantitatively under various conditions in terms of HCI-induced gate current ( $I_{\mathrm {G}}$ ), HCI probability ( $I_{\mathrm {G}}/I_{\mathrm {D}})$ , potentia
Externí odkaz:
https://doaj.org/article/adc146d68e9a473caf479fff0dec55fe
Publikováno v:
IEEE Access, Vol 11, Pp 6293-6298 (2023)
Gallium Nitride (GaN) High-Electron Mobility Transistors (HEMTs) actually represent one of the best candidates for medium-high power and radio frequency applications. As they operate at large bias and electric fields, a comprehensive analysis of the
Externí odkaz:
https://doaj.org/article/3792ea33f2f94501a32f5f5801d80987
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.