Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Carrie L. Wyse"'
Autor:
Mark W. Raynor, Adam Seymour, Jianlong Yao, E. W. Olsen, Carrie L. Wyse, Robert Torres, Praveen Jha
Publikováno v:
ECS Transactions. 13:71-77
Anhydrous HBr used in etch processing for the semiconductor industry requires strict impurity control. However, the gas cylinder material of construction plays a critical role in controlling and maintaining purity levels of the delivered HBr process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d6c00fafe36fb36bebdf1eb26ce8ed9
https://doi.org/10.1149/1.3035369
https://doi.org/10.1149/1.3035369
Autor:
Matt Young, Xiaonan Li, Robert Torres, Timothy A. Gessert, Teresa M. Barnes, Carrie L. Wyse, Marty Scott
Publikováno v:
2009 34th IEEE Photovoltaic Specialists Conference (PVSC).
SF 6 was investigated as an alternative F source for preparing fluorine doped tin oxide films (SnO 2 :F). SnO 2 :F films were prepared on glass by low pressure MOCVD using tetramethyltin (Sn(CH 3 ) 4 ) and O 2 with SF 6 between 500°C and 650°C and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24f346f76776b7c60a86d69b3b5d7228
https://doi.org/10.1109/pvsc.2009.5411291
https://doi.org/10.1109/pvsc.2009.5411291
Autor:
Mark W. Raynor, Carrie L. Wyse, Robert Torres, Jianlong Yao, Adam Seymour, Ryan P. Pemberton, Jinhee Lee, Tanya Evdokimova, Wonduk Jung
Publikováno v:
ECS Meeting Abstracts. :1862-1862
Anhydrous HBr used in reactive ion etch chemistries for the semiconductor industry requires strict control of impurities over time. Proper selection of cylinder materials strongly influences the purity of the HBr over the shelf life of the stored gas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::36ca61aa7640252a1e53b610b4b83f60
https://doi.org/10.1149/ma2008-02/23/1862
https://doi.org/10.1149/ma2008-02/23/1862
Publikováno v:
The Journal of Organic Chemistry. 59:7128-7129
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c32a2fb64d0f8ef14ed4126b269e324
https://doi.org/10.1021/jo00102a045
https://doi.org/10.1021/jo00102a045