Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Carrad, D."'
Autor:
Gluschke, J. G., Seidl, J., Burke, A. M., Lyttleton, R. W., Carrad, D. J., Ullah, A. R., Svensson, S. Fahlvik, Lehmann, S., Linke, H., Micolich, A. P.
We introduce a fabrication method for gate-all-around nanowire field-effect transistors. Single nanowires were aligned perpendicular to underlying bottom gates using a resist-trench alignment technique. Top gates were then defined aligned to the bott
Externí odkaz:
http://arxiv.org/abs/1810.03359
Autor:
Gluschke, J. G., Seidl, J., Lyttleton, R. W., Carrad, D. J., Cochrane, J. W., Lehmann, S., Samuelson, L., Micolich, A. P.
Publikováno v:
Nano Letters 18, 4431-4439 (2018)
We report the development of nanowire field-effect transistors featuring an ultra-thin parylene film as a polymer gate insulator. The room temperature, gas-phase deposition of parylene is an attractive alternative to oxide insulators prepared at high
Externí odkaz:
http://arxiv.org/abs/1809.10471
Publikováno v:
Phys. Rev. Materials 2, 025601 (2018)
Doping is a common route to reducing nanowire transistor on-resistance but has limits. High doping level gives significant loss in gate performance and ultimately complete gate failure. We show that electrolyte gating remains effective even when the
Externí odkaz:
http://arxiv.org/abs/1710.06950
Autor:
Carrad, D. J., Mostert, A. B., Ullah, A. R., Burke, A. M., Joyce, H. J., Tan, H. H., Jagadish, C., Krogstrup, P., Nygård, J., Meredith, P., Micolich, A. P.
Publikováno v:
Nano Letters 17, 827-833 (2017)
A key task in the emerging field of bioelectronics is the transduction between ionic/protonic and electronic signals at high fidelity. This is a considerable challenge since the two carrier types exhibit intrinsically different physics and are best s
Externí odkaz:
http://arxiv.org/abs/1705.00611
Autor:
Burke, A. M., Carrad, D. J., Gluschke, J. G., Storm, K., Svensson, S. Fahlvik, Linke, H., Samuelson, L., Micolich, A. P.
We report a method for making horizontal wrap-gate nanowire transistors with up to four independently controllable wrap-gated segments. While the step up to two independent wrap-gates requires a major change in fabrication methodology, a key advantag
Externí odkaz:
http://arxiv.org/abs/1505.01689
Autor:
Carrad, D. J., Burke, A. M., Lyttleton, R. W., Joyce, H. J., Tan, H. H., Jagadish, C., Storm, K., Linke, H., Samuelson, L., Micolich, A. P.
Publikováno v:
Nano Letters 14, 94 (2014)
We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO$_{4}$ polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain
Externí odkaz:
http://arxiv.org/abs/1404.1975
Autor:
Carrad, D. J., Burke, A. M., Klochan, O., See, A. M., Hamilton, A. R., Rai, A., Reuter, D., Wieck, A. D., Micolich, A. P.
We fabricated an etched hole quantum dot in a Si-doped (311)A AlGaAs/GaAs heterostructure to study disorder effects via magnetoconductance fluctuations (MCF) at millikelvin temperatures. Recent experiments in electron quantum dots have shown that the
Externí odkaz:
http://arxiv.org/abs/1312.1754
Autor:
Carrad, D. J., Burke, A. M., Reece, P. J., Lyttleton, R. W., Waddington, D. E. J., Rai, A., Reuter, D., Wieck, A. D., Micolich, A. P.
We have studied the efficacy of (NH4)2Sx surface passivation on the (311)A GaAs surface. We report XPS studies of simultaneously-grown (311)A and (100) heterostructures showing that the (NH4)2Sx solution removes surface oxide and sulfidizes both surf
Externí odkaz:
http://arxiv.org/abs/1212.0930
Autor:
Burke, A. M., Waddington, D., Carrad, D., Lyttleton, R., Tan, H. H., Reece, P. J., Klochan, O., Hamilton, A. R., Rai, A., Reuter, D., Wieck, A. D., Micolich, A. P.
Gate instability/hysteresis in modulation-doped p-type AlGaAs/GaAs heterostructures impedes the development of nanoscale hole devices, which are of interest for topics from quantum computing to novel spin physics. We present an extended study conduct
Externí odkaz:
http://arxiv.org/abs/1207.2851
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