Uniaxial stress measurements on the 0.97 eV line in irradiated silicon.

Autor: Foy, C P, Carmo, M C do, Davies, G, Lightowlers, E C

Publikováno v: Journal of Physics C: Solid State Physics; 1981, Vol. 14 Issue 1, pL7-L12, 6p

A photoluminescence study of a series of closely related axial defects of monoclinic I and rhombic I symmetry in oxygen-rich, zinc-doped silicon.

Autor: McGuigan, K G, Henry, M O, Campion, J D, Daly, S E, McGlynn, E, Carmo, M C Do

Publikováno v: Semiconductor Science & Technology; 1996, Vol. 11 Issue 6, p930-934, 5p

6H-SiC P-N structures with predominate exciton electroluminescence, obtained by sublimation epitaxy

Autor: Lebedev, A. A., Carmo, M. C. Do

Publikováno v: Materials Science and Engineering B: Solid-State Materials for Advanced Technology; 1997, Vol. 46 Issue: 1 p275-277, 3p

A photoluminescence investigation of local mode vibrations of the beryllium pair centre in silicon.

Autor: Henry, M. O., McGuigan, K. G., Carmo, M. C. do, Nazare, M. H., Lightowlers, E. C.

Publikováno v: Journal of Physics: Condensed Matter; 12/3/1990, Vol. 2 Issue 48, p1-1, 1p