Výsledky vyhledávání - "Carmen Salcianu"

Autor: Carmen Salcianu

Publikováno v: Johnson Matthey Technology Review. 59:90-94

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::96d1853180d139a5ae3298ffae9293d1
https://doi.org/10.1595/205651315x686750

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Functional thin film coatings incorporating gold nanoparticles in a transparent conducting fluorine doped tin oxide matrix

Autor: Peter Trenton Bishop, Ivan P. Parkin, Clair K. T. Chew, Claire J. Carmalt, Carmen Salcianu

Publikováno v: Journal of Materials Chemistry C. 3:1118-1125

Noble nanoparticle–metal oxide composites attract research interest due to their unique combination of properties. We report the successful combination of gold nanoparticles (AuNPs) and F-doped SnO2 composites by layering, producing films that demo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4cb376422a23d01c39344544869338c8
https://doi.org/10.1039/c4tc02275k

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Aerosol-assisted deposition of gold nanoparticle-tin dioxide composite films

Autor: Carmen Salcianu, Clair K. T. Chew, Ivan P. Parkin, Claire J. Carmalt, Peter Trenton Bishop

Publikováno v: RSC Adv.. 4:13182-13190

Composite gold/tin oxide films were grown from a simple one-pot precursor solution containing monobutyltin trichloride and auric acid in methanol using aerosol assisted chemical vapour deposition (AACVD). Two types of films were formed on glass – g

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::44cec1cbfd4e605810635dd7df5a22d2
https://doi.org/10.1039/c3ra46828c

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InGaN/GaN LEDs grown on Si(111): dependence of device performance on threading dislocation density and emission wavelength

Autor: Dandan Zhu, Clifford McAleese, M. Häberlen, Colin J. Humphreys, Carmen Salcianu, Andrew L. Phillips, Ted Thrush, David J. Wallis, Michael John Kane, Trevor Martin, P. A. Lane, Menno J. Kappers, Mike Astles

Publikováno v: physica status solidi c. 7:2168-2170

We demonstrate the growth of crack-free blue and green-emitting LED structures grown on 2-inch and 6-inch Si(111) substrates by metalorganic vapour phase epitaxy (MOVPE), using AlN nucleation layers and AlGaN buffer layers for stress management. LED

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8befb829df914d5aa093dd105bf603ed
https://doi.org/10.1002/pssc.200983522

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Palladium‐based on‐wafer electroluminescence studies of GaN‐based LED structures

Autor: Adam R. Boyd, Carmen Salcianu, Colin J. Humphreys, Ej Thrush, O. Rockenfeller, R. G. Plumb, D. Schmitz, Michael Heuken

Publikováno v: physica status solidi c. 5:2219-2221

Electroluminescence (EL) testing of Light Emitting Diode (LED) structures is usually done at the chip level. Assessing the optical and electrical properties of LED structures at the wafer scale prior to their processing would improve the cost effecti

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e1e097257ebde47099b38e5ab143f1d0
https://doi.org/10.1002/pssc.200778576

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Low-Cost Sodium-Ion Batteries (LOCO-NIBs Project)

Autor: Carmen Salcianu, Maria-Magdalena Titirici

Publikováno v: ECS Meeting Abstracts. :1104-1104

The LOCO-NIBs (Low-cost Na-ion Batteries) Project funded by Innovate UK aims to investigate novel anode and cathode materials with compositions and morphologies which allow stable insertion and removal of sodium ions for a long number of cycles. This

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b55bb8f7c204d96b824014f1f0b6894b
https://doi.org/10.1149/ma2016-03/2/1104

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Low-Cost Sodium-Ion Batteries (LOCO-NIBs Project)

Autor: Carmen Salcianu, Maria-Magdalena Titirici

Publikováno v: ECS Meeting Abstracts. :357-357

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::36c5a40b151af5b4a88431c9f13f8a32
https://doi.org/10.1149/ma2016-03/2/357

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GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE

Autor: Clifford McAleese, A. Pakes, K. K. McLaughlin, Michael Heuken, M. Häberlen, Colin J. Humphreys, Trevor Martin, Mike Astles, Menno J. Kappers, Dandan Zhu, David J. Wallis, P. A. Lane, W. A. Phillips, Carmen Salcianu, Simon Thomas, Ej Thrush

Publikováno v: SPIE Proceedings.

The issues and challenges of growing GaN-based structures on large area Si substrates have been studied. These include Si slip resulting from large temperature non-uniformities and cracking due to differential thermal expansion. Using an AlN nucleati

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5e2aea7cd707c473791f1d97599ae68d
https://doi.org/10.1117/12.814919

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Efficiency measurement of GaN-based quantum well and light-emitting diode structures grown on silicon substrates

Autor: David J. Wallis, Colin J. Humphreys, Nicolas Hylton, Clifford McAleese, Ted Thrush, Trevor P. Martin, Dandan Zhu, Phil Dawson, Mike Astles, Andrew L. Phillips, Michael John Kane, Carmen Salcianu, Menno J. Kappers, M. Häberlen, P. A. Lane

Publikováno v: Journal of Applied Physics. 109:014502

The optical efficiency of GaN-based multiple quantum well (MQW) and light emitting diode (LED) structures grown on Si(111) substrates by metal-organic vapor phase epitaxy was measured and compared with equivalent structures on sapphire. The crystalli

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0d6da348255bdfd8f80cff19b096c563
https://doi.org/10.1063/1.3530602

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