Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Carmelo Vecchio"'
Publikováno v:
Materials Science Forum. 1062:146-151
In this paper, the performance of a new CVD reactor (called PE1O8) designed by LPE and developed in the European project REACTION to process uniform 4H-SiC homoepitaxy on 200 mm substrate is reported. Its tunable multi-zone injection system and new g
Autor:
A. Pecora, Danilo Crippa, Carmelo Vecchio, Francesco La Via, Marco Mauceri, Patrick Fiorenza, Nicolò Piluso
Publikováno v:
Materials Science Forum. :157-160
In this work a new epitaxial process on 6 inches has been performed on 2° off-cut substrate. This off-cut will reduce the material loss during substrate preparation from the crystal boule. The thickness and doping uniformity of the samples grown in
Autor:
Massimo Camarda, Marco Mauceri, Danilo Crippa, Nicolò Piluso, Francesco La Via, A. Pecora, Carmelo Vecchio, Marco Puglisi, Grazia Litrico
Publikováno v:
Materials Science Forum. :121-124
Preliminary results of 150mm SiC 4H 4°off have been obtained with the new 150mm automatic horizontal hot wall reactor PE1O6, using chlorinated chemistry (SiHCl3 + C2H4). A new injection system has been tested in two configurations and results will b
Autor:
Patrick Fiorenza, A. Pecora, Nicolò Piluso, Grazia Litrico, Ruggero Anzalone, Stefania Privitera, Alessandra Alberti, Carmelo Vecchio, Francesco La Via, Giovanna Pellegrino, Danilo Crippa, Massimo Camarda, Marco Mauceri, Antonino La Magna
Publikováno v:
Materials Science Forum. :95-98
In this paper we investigate the role of the growth rate (varied by changing the Si/H2ratio and using TCS to avoid Si droplet formation) on the surface roughness (Rq), the density of single Shockley stacking faults (SSSF) and 3C-inclusions (i.e. epi-
Autor:
Vito Raineri, Carmelo Vecchio, Emanuele Rimini, Sushant Sonde, Filippo Giannazzo, Rositsa Yakimova
Publikováno v:
Physica. E, Low-dimensional systems and nanostructures
44 (2012): 93–96. doi:10.1016/j.physe.2011.01.002
info:cnr-pdr/source/autori:Sonde S, Vecchio C, Giannazzo F, Yakimova R, Raineri V, Rimini E/titolo:Effect of graphene%2F4H-SiC(0001) interface on electrostatic properties in graphene/doi:10.1016%2Fj.physe.2011.01.002/rivista:Physica. E, Low-dimensional systems and nanostructures (Print)/anno:2012/pagina_da:93/pagina_a:96/intervallo_pagine:93–96/volume:44
44 (2012): 93–96. doi:10.1016/j.physe.2011.01.002
info:cnr-pdr/source/autori:Sonde S, Vecchio C, Giannazzo F, Yakimova R, Raineri V, Rimini E/titolo:Effect of graphene%2F4H-SiC(0001) interface on electrostatic properties in graphene/doi:10.1016%2Fj.physe.2011.01.002/rivista:Physica. E, Low-dimensional systems and nanostructures (Print)/anno:2012/pagina_da:93/pagina_a:96/intervallo_pagine:93–96/volume:44
Electrostatic properties, quantum capacitance (C-q) and local density of states (LDOS) are evaluated for graphene on 4H-SiC(0 0 0 1) by measuring the local capacitance with Scanning Capacitance Spectroscopy (SCS). Two distinct samples were used for c
Autor:
R. Lo Nigro, Filippo Giannazzo, Vito Raineri, Carmelo Vecchio, Sushant Sonde, Emanuele Rimini
Publikováno v:
Physica. E, Low-dimensional systems and nanostructures
44 (2012): 989–992. doi:10.1016/j.physe.2011.01.019
info:cnr-pdr/source/autori:Sonde S, Vecchio C, Giannazzo F, Lo Nigro R, Raineri V, Rimini E/titolo:Influence of substrate dielectric permittivity on local capacitive behavior in graphene/doi:10.1016%2Fj.physe.2011.01.019/rivista:Physica. E, Low-dimensional systems and nanostructures (Print)/anno:2012/pagina_da:989/pagina_a:992/intervallo_pagine:989–992/volume:44
44 (2012): 989–992. doi:10.1016/j.physe.2011.01.019
info:cnr-pdr/source/autori:Sonde S, Vecchio C, Giannazzo F, Lo Nigro R, Raineri V, Rimini E/titolo:Influence of substrate dielectric permittivity on local capacitive behavior in graphene/doi:10.1016%2Fj.physe.2011.01.019/rivista:Physica. E, Low-dimensional systems and nanostructures (Print)/anno:2012/pagina_da:989/pagina_a:992/intervallo_pagine:989–992/volume:44
Graphene deposited on silicon dioxide (DG-SiO 2 ) and high- κ dielectric strontium titanate (DG-STO) are investigated for electrostatic properties by local capacitance measurements carried out with Scanning Capacitance Spectroscopy (SCS). The quantu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6168c27ccce7c88a520262c102ce22ff
http://www.sciencedirect.com/science/article/pii/S1386947711000348
http://www.sciencedirect.com/science/article/pii/S1386947711000348
Autor:
M. Camarda, N. Piluso, Carmelo Vecchio, Andrea Canino, Ruggero Anzalone, A. Severino, Marco Mauceri, F. La Via
Publikováno v:
MRS Proceedings. 1433
3C-SiC is very attractive due the chance to be grown on large-area, low-cost Si substrates. Moreover, 3C-SiC has higher channel electron mobility with respect to 4H-SiC, interesting property in MOSFET applications. Other application fields where 3C-S
Autor:
Rositsa Yakimova, Vito Raineri, Sushant Sonde, Carmelo Vecchio, Emanuele Rimini, Filippo Giannazzo
Publikováno v:
Applied physics letters 97 (2010): 132101–132101. doi:10.1063/1.3489942
info:cnr-pdr/source/autori:Sonde S; Giannazzo F; Vecchio C; Yakimova R; Rimini E; Raineri V/titolo:Role of graphene%2Fsubstrate interface on the local transport properties of the two-dimensional electron gas/doi:10.1063%2F1.3489942/rivista:Applied physics letters/anno:2010/pagina_da:132101/pagina_a:132101/intervallo_pagine:132101–132101/volume:97
info:cnr-pdr/source/autori:Sonde S; Giannazzo F; Vecchio C; Yakimova R; Rimini E; Raineri V/titolo:Role of graphene%2Fsubstrate interface on the local transport properties of the two-dimensional electron gas/doi:10.1063%2F1.3489942/rivista:Applied physics letters/anno:2010/pagina_da:132101/pagina_a:132101/intervallo_pagine:132101–132101/volume:97
The electron mean free path (l(gr)) is "locally" evaluated by scanning capacitance spectroscopy on graphene obtained with different preparation methods and on different substrates, i.e., graphene exfoliated from highly oriented pyrolitic graphite (HO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5d62aeb4beadf13d0f4a6df605106e7c
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-61209
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-61209
Autor:
Sushant Sonde, Rositza Yakimova, Carmelo Vecchio, Vito Raineri, Emanuele Rimini, Filippo Giannazzo
Publikováno v:
Applied Physics Letters. 98:069902
Autor:
Rositza Yakimova, Vito Raineri, Sushant Sonde, Carmelo Vecchio, Martin Rambach, Filippo Giannazzo, Corrado Bongiorno
Publikováno v:
Nanoscale Research Letters, Vol 6, Iss 1, p 269 (2011)
Nanoscale Research Letters
Nanoscale research letters
6 (2011): 269.
info:cnr-pdr/source/autori:Vecchio C, Sonde S, Bongiorno C, Rambach M, Yakimova R, Raineri V, Giannazzo F/titolo:Nanoscale structural characterization of epitaxial graphene grown on off-axis 4H-SiC (0001)/doi:/rivista:Nanoscale research letters (Print)/anno:2011/pagina_da:269/pagina_a:/intervallo_pagine:269/volume:6
Nanoscale Research Letters
Nanoscale research letters
6 (2011): 269.
info:cnr-pdr/source/autori:Vecchio C, Sonde S, Bongiorno C, Rambach M, Yakimova R, Raineri V, Giannazzo F/titolo:Nanoscale structural characterization of epitaxial graphene grown on off-axis 4H-SiC (0001)/doi:/rivista:Nanoscale research letters (Print)/anno:2011/pagina_da:269/pagina_a:/intervallo_pagine:269/volume:6
In this work, we present a nanometer resolution structural characterization of epitaxial graphene (EG) layers grown on 4H-SiC (0001) 8° off-axis, by annealing in inert gas ambient (Ar) in a wide temperature range (Tgr from 1600 to 2000°C). For all