Výsledky vyhledávání - "Carlton T. Creamer"

0.1- $\mu \text{m}$ InAlN/GaN High Electron-Mobility Transistors for Power Amplifiers Operating at 71–76 and 81–86 GHz: Impact of Passivation and Gate Recess

Autor: P.M. Smith, Alice Vera, J. Diaz, James J. Komiak, K. H. George Duh, Kanin Chu, K. Nichols, Louis M. Mt. Pleasant, Peide D. Ye, Philip Seekell, Lin Dong, Dong Xu, Carlton T. Creamer, Xiaoping Yang, P.C. Chao, M. Ashman

Publikováno v: IEEE Transactions on Electron Devices. 63:3076-3083

We have developed 0.1- $\mu \text{m}$ gate-length InAlN/GaN high electron-mobility transistors (HEMTs) for millimeter-wave (MMW) power applications, particularly at 71–76 and 81–86 GHz bands. The impacts of depth and width of the gate recess groo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::94402cce99893677da7600801d3a1c6e
https://doi.org/10.1109/ted.2016.2579160

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GaN-on-Diamond HEMTs with 11W/mm Output Power at 10GHz

Autor: Ray Kallaher, J. Diaz, John D. Blevins, Craig McGray, Scott Sweetland, P.C. Chao, Carlton T. Creamer, Glen D. Via, Kanin Chu

Publikováno v: MRS Advances. 1:147-155

A new device-first low-temperature bonded gallium nitride (GaN)-on-diamond high-electronic mobility transistor (HEMT) technology with state-of-the-art, radio frequency (RF) power performance is described. In this process, the devices were first fabri

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e29189623c3505644338c5265ae3090f
https://doi.org/10.1557/adv.2016.176

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Low-Temperature Bonded GaN-on-Diamond HEMTs With 11 W/mm Output Power at 10 GHz

Autor: Michael Shur, J. Diaz, John D. Blevins, Carlton T. Creamer, Craig McGray, Kenneth K. Chu, Ray Kallaher, Glen D. Via, Pane-Chane Chao, Thomas Yurovchak

Publikováno v: IEEE Transactions on Electron Devices. 62:3658-3664

We report recent progress on GaN-on-diamond high electron mobility transistors (HEMTs) fabricated using a low-temperature device-transfer process. The devices were first fabricated on a GaN-on-SiC epitaxial wafer and were subsequently separated from

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::710313ab042123cb6092c94540c97785
https://doi.org/10.1109/ted.2015.2480756

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0.1- $\mu \text{m}$ Atomic Layer Deposition Al2O3 Passivated InAlN/GaN High Electron-Mobility Transistors for E-Band Power Amplifiers

Autor: K.H.G. Duh, Kenneth K. Chu, J. Diaz, M. Ashman, P.M. Smith, Peide D. Ye, Carlton T. Creamer, Lin Dong, L. Mt. Pleasant, James J. Komiak, K. Nichols, P.C. Chao, Dong Xu

Publikováno v: IEEE Electron Device Letters. 36:442-444

High-performance 0.1- $\mu \text{m}$ InAlN/GaN high electron-mobility transistors (HEMTs) have been successfully developed for power amplifiers operating at E-band (targeting 71–76 and 81–86-GHz bands). High maximum drain current of 1.75 A/mm and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::71451ba83d6bd7bd5725474f206289d0
https://doi.org/10.1109/led.2015.2409264

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High-Performance GaN-on-Diamond HEMTs Fabricated by Low-Temperature Device Transfer Process

Autor: Bernard J. Schmanski, Scott Sweetland, J. Diaz, John D. Blevins, Thomas Yurovchak, Pane C. Chao, Craig McGray, Carlton T. Creamer, Raymond L. Kallaher, Kenneth K. Chu, Glen D. Via

Publikováno v: 2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

We report recent progress on GaN-on-diamond high-electron-mobility transistors (HEMTs) fabricated by low-temperature device transfer. The devices were first fabricated on a GaN-on-SiC epitaxial wafer and were subsequently separated from the SiC and b

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9e33ad9f57381a4f3a7766de25af2723
https://doi.org/10.1109/csics.2015.7314511

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Advanced Cooling Designs for GaN-on-Diamond MMICs

Autor: Kanin Chu, Amir Shooshtari, Carlton T. Creamer, Thomas Yurovchak, Serguei Dessiatoun, Michael M. Ohadi, Keith Lang, Adonis Kassinos, Geoffrey O. Campbell, Henry M. Eppich

Publikováno v: Volume 3: Advanced Fabrication and Manufacturing; Emerging Technology Frontiers; Energy, Health and Water- Applications of Nano-, Micro- and Mini-Scale Devices; MEMS and NEMS; Technology Update Talks; Thermal Management Using Micro Channels, Jets, Sprays.

Under the DARPA-sponsored ICECool Applications program, a microchannel cooling system using a 50-50 ethylene glycol-water mixture was optimized for cooling a high-power GaN-on-Diamond Monolithic Microwave Integrated Circuit (MMIC). Automated multi-ob

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0f9fc3ef1897e0e28d00f0c463b66fad
https://doi.org/10.1115/ipack2015-48429

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S2-T6: Microchannel cooled, high power GaN-on-Diamond MMIC

Autor: Scott Sweetland, Patrick McCluskey, Bernard J. Schmanski, Geoff Campbell, Thomas Yurovchak, Kenneth K. Chu, Carlton T. Creamer, Michael M. Ohadi, P.C. Chao, Henry Eppich

Publikováno v: 2014 Lester Eastman Conference on High Performance Devices (LEC).

In this work, we report on an innovative approach which integrates GaN-on-Diamond microstrip MMICs with a state-of-the-art microchannel cooler and provides a significant thermal advantage for high power GaN applications. Specifically, we describe eff

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3235deea39f54d30fb71f3ff9718c69d
https://doi.org/10.1109/lec.2014.6951559

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S2-T4: Low-temperature substrate bonding technology for high power GaN-on-diamond HEMTs

Autor: Thomas Yurovchak, Pane C. Chao, J. Diaz, Scott Sweetland, Carlton T. Creamer, Craig McGray, Raymond L. Kallaher, Kenneth K. Chu

Publikováno v: 2014 Lester Eastman Conference on High Performance Devices (LEC).

We report the first demonstration of GaN-on-diamond RF power transistors produced by low-temperature substrate bonding technology. GaN high-electron-mobility transistors (HEMTs) are lifted from the original SiC substrate post fabrication and transfer

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ca23fcb0f89e4005114ad171fb3a487b
https://doi.org/10.1109/lec.2014.6951558

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Thermal Modeling of High Power GaN-on-Diamond HEMTs Fabricated by Low-Temperature Device Transfer Process

Autor: Carlton T. Creamer, Pane Chane Chao, Kenneth K. Chu, Thomas Yurovchak

Publikováno v: 2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

We report on a novel fabrication process of GaN-on-Diamond high electron mobility transistors (HEMTs) and its resulting thermal performance enhancement over conventional GaN-on-SiC technology. In this process, GaN devices are first fabricated on thei

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1c8cc1e62984de0a8f4f27627f3bd93a
https://doi.org/10.1109/csics.2013.6659246

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