Zobrazeno 1 - 10
of 71
pro vyhledávání: '"Carlton M. Osburn"'
Autor:
Carlton M. Osburn, Mehmet C. Öztürk, Gerald Lucovsky, Jay Hauser, I. De, K. F. Yee, C. H. Lee, Z. J. Luo, I. Kim, S. J. Lee, S. Gannavaram, Wenjuan Zhu, S. K. Han, T. P. Ma, D.-L. Kwong
Publikováno v:
IBM Journal of Research and Development. 46:299-315
The vertical scaling requirements for gate stacks and for shallow extension junctions are reviewed. For gate stacks, considerable progress has been made in optimizing oxide/nitride and oxynitride dielectrics to reduce boron penetration and dielectric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::148e73d00ff3eb449768cba3c4dec832
https://doi.org/10.1147/rd.462.0299
https://doi.org/10.1147/rd.462.0299
Publikováno v:
Solid-State Electronics. 44:1077-1080
The optimal gate electrode workfunction was determined for the 50 nm technology node using a simulation strategy that takes into account the impact of short-channel effects on device performance in uniformly doped and super-steep-retrograde doped cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c22bd94eb65c09253ac2a38bcb96dcbc
https://doi.org/10.1016/s0038-1101(99)00323-8
https://doi.org/10.1016/s0038-1101(99)00323-8
Autor:
I. De, Carlton M. Osburn
Publikováno v:
IEEE Transactions on Electron Devices. 46:1711-1717
Super-steep retrograded (SSR) channels were compared to uniformly doped (UD) channels as devices are scaled down from 250 nm to the 50 nm technology node, according to the scheme targeted by the National Technology Roadmap for Semiconductors (1997).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5a8bc145fd59eda46637dd3af56eb9d
https://doi.org/10.1109/16.777161
https://doi.org/10.1109/16.777161
Autor:
Carlton M. Osburn, K. R. Bellur
Publikováno v:
Thin Solid Films. 332:428-436
Analysis of the components of parasitic series resistance in ULSI devices shows that interfacial contact resistivities less than 10 −7 Ω cm 2 will be required for sub 100-nm ULSI devices in order to stay on the historical performance trend. With d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2d019dd4fc17c4a21f3fb878f0bee5f
https://doi.org/10.1016/s0040-6090(98)01046-3
https://doi.org/10.1016/s0040-6090(98)01046-3
Autor:
Jie J. Sun, Carlton M. Osburn
Publikováno v:
IEEE Transactions on Electron Devices. 45:1377-1380
Deep submicron elevated source/drain (S/D) MOSFET's with epi facets, without facets, and with a second sidewall spacer covering the facets were studied using two-dimensional (2-D) process and device simulations. A slight degradation of drain-induced-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba2608fee3c97300a546a3efc253d46d
https://doi.org/10.1109/16.678583
https://doi.org/10.1109/16.678583
Autor:
A. Srivastava, R. Westhoff, Carlton M. Osburn, R. F. Bartholomew, N. A. Masnari, J. Sun, K. R. Bellur
Publikováno v:
Journal of The Electrochemical Society. 145:2131-2137
Device drive current, parasitic resistance, and junction leakage current have been studied using silicided and non-silicided deep submicron elevated source/drain (ESD) n-channel metal oxide semiconductor field effect transistors (NMOSFETs). This stud
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::727016a1feecaea33a5128f96e96e2ae
https://doi.org/10.1149/1.1838607
https://doi.org/10.1149/1.1838607
Autor:
N. A. Masnari, R. F. Bartholomew, J. Sun, A. Srivastava, R. Westhoff, Carlton M. Osburn, K. R. Bellur
Publikováno v:
Journal of The Electrochemical Society. 144:3659-3664
Ultrashallow elevated n'/p junctions (∼75 nm) incorporating selectively deposited epitaxial silicon layers were fabricated. The undoped epi layers (∼100 nm) were deposited on exposed diffusion areas in an Advanced Semiconductor Material Epsilon I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4454957384aaf9b11f96a2a80148eb9
https://doi.org/10.1149/1.1838066
https://doi.org/10.1149/1.1838066
Publikováno v:
Thin Solid Films. :562-569
11B+ and 49BF2+ implants on a Varian VIISion-80 PLUS Ion Implanter from 2.0 to 8.9 keV at a dose of 1E15/cm2, and at various controlled and measured (in situ) peak beam-current densities, ranging from 3 to 600 μA/cm2, were investigated to study the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1e8b255e3da39f25c04815785f4be47
https://doi.org/10.1016/s0040-6090(97)00494-x
https://doi.org/10.1016/s0040-6090(97)00494-x
Autor:
Kevin X. Zhang, Carlton M. Osburn
Publikováno v:
Solid-State Electronics. 41:619-625
High performance MOSFETs having effective channel lengths of 0.18 ± 0.06 μm were individually optimized and fabricated with four different gate dielectrics, including Furnace, rapid thermal oxides (RTO), rapid thermal chemical vapor deposited (RTCV
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6c6b0c55870d3bb0bd3ecd682daf77d
https://doi.org/10.1016/s0038-1101(96)00195-5
https://doi.org/10.1016/s0038-1101(96)00195-5
Publikováno v:
IEEE Transactions on Electron Devices. 44:1491-1498
Deep submicron NMOSFETs with elevated source/drain (ESD) were fabricated using self-aligned selective epitaxial deposition and engineered ion implanted profiles in the elevated layers, Deeper source/drain (S/D) junctions give rise to improved drive c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ca75aa97c45c2b516eb4ed19a74b73a
https://doi.org/10.1109/16.622606
https://doi.org/10.1109/16.622606