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pro vyhledávání: '"Carlotta Gastaldi"'
Autor:
Sadegh Kamaei, Ali Saeidi, Carlotta Gastaldi, Teodor Rosca, Luca Capua, Matteo Cavalieri, Adrian M. Ionescu
Publikováno v:
npj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-10 (2021)
Abstract We report the fabrication process and performance characterization of a fully integrated ferroelectric gate stack in a WSe2/SnSe2 Tunnel FETs (TFETs). The energy behavior of the gate stack during charging and discharging, together with the e
Externí odkaz:
https://doaj.org/article/f68372b2b4fd4e2db205ac95097f52d8
Autor:
Carlotta Gastaldi, Matteo Cavalieri, Ali Saeidi, Eamon O'Connor, Francesco Bellando, Igor Stolichnov, Adrian M. Ionescu
Publikováno v:
IEEE Transactions on Electron Devices. 69:2680-2685
Publikováno v:
ACS Applied Electronic Materials. 2:1752-1758
In this work, we report an experimental investigation of pulsed laser deposition (PLD) of thin Gd:HfO2 layers at 330 °C, which show ferroelectric behavior after annealing at 450 °C, compatible with...
Autor:
Sadegh Kamaei, Xia Liu, Ali Saeidi, Yingfen Wei, Carlotta Gastaldi, Juergen Brugger, Adrian Ionescu
Publikováno v:
Research Square-under review in Nature Electronics
Research Square
Research Square
The demand for low power, large-scale integration, and novel functionality has been increasing since the emergence of the internet of things (IoT) and Edge Artificial Intelligence (AI) applications requiring real-time energy-efficient information pro
Autor:
Adrian M. Ionescu, L. Capua, Sadegh Kamaei, Carlotta Gastaldi, Teodor Rosca, Matteo Cavalieri, Ali Saeidi
Publikováno v:
npj 2D Materials and Applications (npj 2D Mater Appl)
npj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-10 (2021)
npj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-10 (2021)
We report the fabrication process and performance characterization of a fully integrated ferroelectric gate stack in a WSe2/SnSe2 Tunnel FETs (TFETs). The energy behavior of the gate stack during charging and discharging, together with the energy los
Autor:
Éamon O’Connor, Carlotta Gastaldi, Matteo Cavalieri, Teodor Rosca, Sadegh Kamaei, Adrian M. Ionescu, Ali Saeidi, Igor Stolichnov
Publikováno v:
Applied Physics Letters
HfO2-based ferroelectrics are considered a promising class of materials for logic and memory applications due to their CMOS compatibility and ferroelectric figures of merit. A steep-slope field-effect-transistor (FET) switch is a device for logic app
Autor:
Adrian M. Ionescu, Matteo Cavalieri, Ali Saeidi, Carlotta Gastaldi, Igor Stolichnov, P. Muralt
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM)
In this paper, we experimentally explore the transient negative capacitance effect in ferroelectric high-k gate stacks using multi-ferroelectric domain Si-doped HfO 2 with and without the metal plane, MFMIS (TiN/Si:HfO 2 /TiN/SiO 2 ) and MFIS (TiN/Si
Autor:
Ludovic Goux, Gouri Sankar Kar, Hugo Bender, Bogdan Govoreanu, Olivier Richard, Umberto Celano, Wilfried Vandervorst, Carlotta Gastaldi
Publikováno v:
Microelectronic Engineering. 178:122-124
In this work, we observe the switching mechanisms in non-filamentary resistive switching (RS) devices, investigated through a nanosized conductive tip used as a movable (virtual) top-electrode. The correlation between different conductive states of v
Autor:
Yogesh Singh Chauhan, Adrian M. Ionescu, Francesco Bellando, Ali Saeidi, Chetan Kumar Dabhi, Carlotta Gastaldi
Publikováno v:
Applied Physics Letters
One of the main advantages of Ion-Sensitive Field-Effect Transistor (ISFET) technology is the capability to exploit technological advancements initially developed for conventional FETs for logic applications, such as the employ of high-k dielectrics
Autor:
Matteo Cavalieri, Thomas Mikolajick, Michael J. Hoffmann, Adrian M. Ionescu, Carlotta Gastaldi, Uwe Schroeder, Igor Stolichnov
Publikováno v:
Applied Physics Letters
HfO2-based ferroelectrics have dramatically changed the application perspectives of polarization-switching materials for information processing and storage. Their CMOS compatibility and preservation of high reversible polarization down to a few nanom