Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Carlos Morote"'
Autor:
Christian Pizzetti, David DeKraker, Virginie Loup, Brent D. Schwab, Carlos Morote, Philippe Garnier, Marine Audouin, Laurence Gabette
Publikováno v:
Solid State Phenomena. 314:289-294
During silicide formation, unreacted NiPt metals is traditionally removed either by aqua regia (ESH concern) or SPM. This latter can easily degrade the device yield in HKMG (High K Metal Gate) nodes if the metal gates (usually TiN based) aren’t per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c32bca053ba1a0d6d6dfa9b17b094c8b
https://doi.org/10.4028/www.scientific.net/ssp.314.289
https://doi.org/10.4028/www.scientific.net/ssp.314.289
Autor:
Carlos Morote, Thomas Massin, Philippe Garnier, Jeffrey M. Lauerhaas, Corentin Chatelet, Emmanuel Oghdayan, Jeffery W. Butterbaugh
Publikováno v:
Solid State Phenomena. 314:107-112
Silicon nitride is commonly etched by hot orthophosphoric acid. Hot diluted hydrofluoric acid is hereby used as an alternative. Nonetheless, in presence of silicon surfaces, some corrosion has been evidenced, degrading significantly active areas duri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c03e5612503e960ce94a3ada04209afe
https://doi.org/10.4028/www.scientific.net/ssp.314.107
https://doi.org/10.4028/www.scientific.net/ssp.314.107
Autor:
Jeff Butterbaugh, Ionut Radu, Francois Rieutord, Frank Fournel, Martin Vandenbossche, Marc Veillerot, Carlos Morote, Laurent Clavelier, Jean-Paul Barnes, Névine Rochat, Christophe Morales, Yannick Le Tiec, Hubert Moriceau
Publikováno v:
ECS Transactions. 25:131-138
Over the past few years, industrial companies moved from batch to single-wafer tools. In so doing, the drying impact becomes critical when the technological node also decreases. The wafer direct bonding technique is very sensitive to surface adsorbed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6e4f1dc5498ee43564ce4823235f4bad
https://doi.org/10.1149/1.3202645
https://doi.org/10.1149/1.3202645