Zobrazeno 1 - 10
of 98
pro vyhledávání: '"Carlos H. Diaz"'
Autor:
Ramamoorthy Ramesh, Sayeef Salahuddin, Suman Datta, Carlos H. Diaz, Dmitri E. Nikonov, Ian A. Young, Donhee Ham, Meng-Fan Chang, Win-San Khwa, Ashwin Sanjay Lele, Christian Binek, Yen-Lin Huang, Yuan-Chen Sun, Ying-Hao Chu, Bhagwati Prasad, Michael Hoffmann, Jia-Mian Hu, Zhi (Jackie) Yao, Laurent Bellaiche, Peng Wu, Jun Cai, Joerg Appenzeller, Supriyo Datta, Kerem Y. Camsari, Jaesuk Kwon, Jean Anne C. Incorvia, Inge Asselberghs, Florin Ciubotaru, Sebastien Couet, Christoph Adelmann, Yi Zheng, Aaron M. Lindenberg, Paul G. Evans, Peter Ercius, Iuliana P. Radu
Publikováno v:
APL Materials, Vol 12, Iss 9, Pp 099201-099201-73 (2024)
Externí odkaz:
https://doaj.org/article/b2b9e2e5da1a4c99bd0b8ddeab09dc2b
Autor:
Gustavo Laham, Gervasio Soler Pujol, Jenny Guzman, Natalia Boccia, Anabel Abib, Carlos H. Diaz
Publikováno v:
Seminars in Dialysis.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01c4a4791ca8d0164975cd3cdbace3fd
https://doi.org/10.1111/sdi.13157
https://doi.org/10.1111/sdi.13157
Autor:
Carlos H. Diaz, Jau-Yi Wu, Rawan Naous, Shimeng Yu, Kerem Akarvardar, C. H. Lee, Xiaoyu Sun, H. Y. Lee, X. Y. Bao, H.-S. P. Wong, Win-San Khwa, T. C. Chen, Yu-Lin Chen, Ming-Hsung Chang
Publikováno v:
IEEE Transactions on Electron Devices. 68:5585-5591
The impact of phase change memory (PCM) device non-idealities on the deep neural network (DNN) inference accuracy is systematically investigated. Based on the experimental PCM data, statistical models of device non-idealities were extracted and incor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::701715fc53192ea075079135f701cec1
https://doi.org/10.1109/ted.2021.3113300
https://doi.org/10.1109/ted.2021.3113300
Autor:
Ming-Yuan Song, Katherine Chiang, Chen Tzu-Chiang, Jin Cai, Chiang Hung-Li, Mauricio Manfrini, Jung-Piao Chiu, Tahui Wang, Chen Yu-Sheng, H.-S. Philip Wong, Carlos H. Diaz, William J. Gallagher
Publikováno v:
IEEE Transactions on Electron Devices. 67:3102-3108
To increase the density of magnetoresistive random access memory (MRAM) beyond the 1T1MTJ MRAM cell in use today, the design space for 1S1MTJ MRAM array is analyzed by cooptimizing both selectors and MTJs. Current low-resistance MTJs for 1T1MTJ MRAM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7b75aedf4f84fec2910bbf1f7492530
https://doi.org/10.1109/ted.2020.3005118
https://doi.org/10.1109/ted.2020.3005118
Autor:
Johanna Caldano, Henry Darquea, Juan P Ponti, Maria Giordani, Silvina Aleman, Rosana Groppa, Nora Imperiali, Jihan Sleiman, Gervasio Soler Pujol, Carlos H Diaz
Publikováno v:
Transplantation. 106:S625-S625
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45a539821b934ce99c1e61bc1e9f5f53
https://doi.org/10.1097/01.tp.0000888944.48547.af
https://doi.org/10.1097/01.tp.0000888944.48547.af
Publikováno v:
Transplantation. 106:S575-S575
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::073db68dfee89a3c4aae96839013e8f3
https://doi.org/10.1097/01.tp.0000888620.65014.29
https://doi.org/10.1097/01.tp.0000888620.65014.29
Autor:
Fen Xue, Shan-Yi Yang, Yi-Hui Su, Yu-Chen Hsin, I-Jung Wang, Shy-Jay Lin, Chi-Feng Pai, Jeng-Hua Wei, Yao-Jen Chang, MingYaun Song, Guan-Long Chen, Carlos H. Diaz, Yen Lin Huang, Chien-Ming Lee, Shan X. Wang
Publikováno v:
IRPS
Spin-orbit-torque magnetic random-access memory (SOT-MRAM) equipped with sub-I-V switching voltage [1, 2] is considered to be one of the promising candidates for next-generation low-power, high speed and non-volatile embedded cache memory application
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e537a83651102d833d9941a36b8764e
https://doi.org/10.1109/irps46558.2021.9405127
https://doi.org/10.1109/irps46558.2021.9405127
Autor:
Shao-Ming Yu, Y.-H. Lee, Jau-Yi Wu, Gary T. Chen, Dawei Heh, Xinyu Bao, Carlos H. Diaz, Chen Yu-Sheng, P. J. Liao, Chih-Hung Nien, Vincent D.-H. Hou, Wen-Hsien Kuo
Publikováno v:
IRPS
PCRAM SET/RESET cycling caused GST component segregation and void formation, thus leading to cell failure. We compared electrical cell characteristics and failure analysis of GST with various Ge compositions to understand the GST material segregation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8ee4306f02d7e44f3b5502785df3cb0
https://doi.org/10.1109/irps46558.2021.9405168
https://doi.org/10.1109/irps46558.2021.9405168
Autor:
J. Cai, B. Pulicherla, C. L. Chen, Subhadeep Mukhopadhyay, K. F. Yu, J. F. Wang, H. L. Chiang, W. S. Khwa, W. K. Lee, H.-S. P. Wong, Ke-Wei Su, T. C. Chen, Tahui Wang, P. J. Liao, Carlos H. Diaz
Publikováno v:
2020 IEEE Symposium on VLSI Technology.
We present advanced FinFET characterization and circuit analysis at reduced temperatures down to 77 K. Steepened subthreshold slope enables threshold voltage $(V_{\mathrm{TH}})$ and supply voltage $(V_{\mathrm{DD}})$ scaling for $\sim 0.27\times$ pow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b46222d3f75888c16e9105dbdfe4e5ea
https://doi.org/10.1109/vlsitechnology18217.2020.9265065
https://doi.org/10.1109/vlsitechnology18217.2020.9265065
Autor:
Martin Christopher Holland, Z. Q. Wu, Aryan Afzalian, E. Chen, T. Vasen, Blandine Duriez, M.J.H. van Dal, Gerben Doornbos, Tzer-Min Shen, Carlos H. Diaz, Tung-Tsun Chen, Georgios Vellianitis, S.-K Su
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
We present (i) a novel, thermally stable Atomic Layer Deposition (ALD) high-k dielectric stack that, for the first time, has the potential to meet all gate stack requirements for both n- and p-channel Ge FETs, (ii) record low contact resistivity for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa56e363843dda21233d0d0ce7ed4d3c
https://doi.org/10.1109/iedm.2018.8614577
https://doi.org/10.1109/iedm.2018.8614577