Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Carlos G. Torres‐Castanedo"'
Autor:
Mustafa Bal, Akshay A. Murthy, Shaojiang Zhu, Francesco Crisa, Xinyuan You, Ziwen Huang, Tanay Roy, Jaeyel Lee, David van Zanten, Roman Pilipenko, Ivan Nekrashevich, Andrei Lunin, Daniel Bafia, Yulia Krasnikova, Cameron J. Kopas, Ella O. Lachman, Duncan Miller, Josh Y. Mutus, Matthew J. Reagor, Hilal Cansizoglu, Jayss Marshall, David P. Pappas, Kim Vu, Kameshwar Yadavalli, Jin-Su Oh, Lin Zhou, Matthew J. Kramer, Florent Lecocq, Dominic P. Goronzy, Carlos G. Torres-Castanedo, P. Graham Pritchard, Vinayak P. Dravid, James M. Rondinelli, Michael J. Bedzyk, Mark C. Hersam, John Zasadzinski, Jens Koch, James A. Sauls, Alexander Romanenko, Anna Grassellino
Publikováno v:
npj Quantum Information, Vol 10, Iss 1, Pp 1-8 (2024)
Abstract We present a transmon qubit fabrication technique that yields systematic improvements in T 1 relaxation times. We encapsulate the surface of niobium and prevent the formation of its lossy surface oxide. By maintaining the same superconductin
Externí odkaz:
https://doaj.org/article/e2667e9866cd4486bc13a96591904d6d
Autor:
Xuezeng Lu, Dominic P. Goronzy, Carlos G. Torres-Castanedo, Paul Masih Das, Maryam Kazemzadeh-Atoufi, Anthony McFadden, Corey Rae H. McRae, Peter W. Voorhees, Vinayak P. Dravid, Michael J. Bedzyk, Mark C. Hersam, James M. Rondinelli
Publikováno v:
Physical Review Materials. 6
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c2deb46f30ff32f8f49127cab544ad3
https://doi.org/10.1103/physrevmaterials.6.064402
https://doi.org/10.1103/physrevmaterials.6.064402
Autor:
Carlos G. Torres-Castanedo, Michael J. Bedzyk, William R. Dichtel, Edon Vitaku, Halleh B. Balch, Ashutosh Giri, Matthew Bartnof, Vinod K. Sangwan, Hong Li, Sangni Xun, Austin M. Evans, Matthew S. Rahn, Patrick E. Hopkins, Alan J. H. McGaughey, David W. Burke, Jean-Luc Brédas, Nathan P. Bradshaw, Mark C. Hersam, Feng Wang, Jonathan A. Malen
Publikováno v:
Nature Materials. 20:1142-1148
As the features of microprocessors are miniaturized, low-dielectric-constant (low-k) materials are necessary to limit electronic crosstalk, charge build-up, and signal propagation delay. However, all known low-k dielectrics exhibit low thermal conduc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc80cb8588e991fc9d0637e656114705
https://doi.org/10.1038/s41563-021-00934-3
https://doi.org/10.1038/s41563-021-00934-3
Autor:
Kevin M. Ryan, Carlos G. Torres-Castanedo, Dominic P. Goronzy, David A. Garcia Wetten, Mark Field, Cameron J. Kopas, Jayss Marshall, Matthew J. Reagor, Michael J. Bedzyk, Mark C. Hersam, Venkat Chandrasekhar
Publikováno v:
Applied Physics Letters. 121:202601
Continued advances in superconducting qubit performance require more detailed understandings of the many sources of decoherence. Within these devices, two-level systems arise due to defects, interfaces, and grain boundaries and are thought to be a ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3b824800d6ef4fc4ee524cdb61a9ea0c
https://doi.org/10.1063/5.0119932
https://doi.org/10.1063/5.0119932
Autor:
M. Ugalde-Reygadas, Valeria D. Moreno-Regino, Carlos G. Torres-Castanedo, Michael J. Bedzyk, Rebeca Castanedo-Pérez, Gerardo Torres-Delgado
Publikováno v:
Materials Today Communications. 32:103999
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f36311ddf28a875d95e0a4f42c69416
https://doi.org/10.1016/j.mtcomm.2022.103999
https://doi.org/10.1016/j.mtcomm.2022.103999
Autor:
Austin M, Evans, Ashutosh, Giri, Vinod K, Sangwan, Sangni, Xun, Matthew, Bartnof, Carlos G, Torres-Castanedo, Halleh B, Balch, Matthew S, Rahn, Nathan P, Bradshaw, Edon, Vitaku, David W, Burke, Hong, Li, Michael J, Bedzyk, Feng, Wang, Jean-Luc, Brédas, Jonathan A, Malen, Alan J H, McGaughey, Mark C, Hersam, William R, Dichtel, Patrick E, Hopkins
Publikováno v:
Nature materials. 20(8)
As the features of microprocessors are miniaturized, low-dielectric-constant (low-k) materials are necessary to limit electronic crosstalk, charge build-up, and signal propagation delay. However, all known low-k dielectrics exhibit low thermal conduc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::e443dfd411860600b99088aa4f52debe
https://pubmed.ncbi.nlm.nih.gov/33737728
https://pubmed.ncbi.nlm.nih.gov/33737728
Autor:
Kyu‐Young Park, Yizhou Zhu, Carlos G. Torres‐Castanedo, Hee Joon Jung, Norman S. Luu, Ozge Kahvecioglu, Yiseul Yoo, Jung‐Woo T. Seo, Julia R. Downing, Hee‐Dae Lim, Michael J. Bedzyk, Christopher Wolverton, Mark C. Hersam
Publikováno v:
Advanced Materials. 34:2270026
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56ba82a1a759fb16c76b8ab8aeb0cf09
https://doi.org/10.1002/adma.202270026
https://doi.org/10.1002/adma.202270026
Autor:
Kaikai Liu, Wenzhe Guo, Ronghui Lin, Kuang-Hui Li, Hamad S. Alotaibi, Haiding Sun, Sergio Valdes-Galán, Carlos G. Torres-Castanedo, Xiaohang Li
Publikováno v:
Journal of Crystal Growth. 488:16-22
Because of competition and the resulting confidentiality, there is little information on induction-heating MOCVD reactor design available in print and on the internet. We thus appreciate the following people who have generously provided suggestions a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93ca192b5b3896adf17b81c05954d8ae
https://doi.org/10.1016/j.jcrysgro.2018.02.031
https://doi.org/10.1016/j.jcrysgro.2018.02.031
Publikováno v:
Applied Physics Letters. 118:032103
We have demonstrated wide bandgap and composition range β-(AlxGa1−x)2O3 thin films by employing thermal annealing of β-Ga2O3/sapphire templates. With proper annealing conditions at 1000–1500 °C, the β-Ga2O3 thin films transformed to the β-(A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1900d91bd3ce467f5cb031097d5f68be
https://doi.org/10.1063/5.0027067
https://doi.org/10.1063/5.0027067
Autor:
Vinod K. Sangwan, J. Tyler Gish, Mark C. Hersam, Hadallia Bergeron, Chi Zhang, Katherine Su, Benji Maruyama, Nicholas R. Glavin, Silu Guo, Megan E. Beck, Carlos G. Torres-Castanedo, Drake Austin, Paul T. Brown, Linda M. Guiney, Vinayak P. Dravid, Michael J. Bedzyk, Rahul Rao, David Lam
Publikováno v:
Applied Physics Reviews. 7:041402
Indium monoselenide (InSe) is an emerging two-dimensional semiconductor with superlative electrical and optical properties whose full potential for high-performance electronics and optoelectronics has been limited by the lack of reliable large-area t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9e9801441fb64e37df7bbd7b6652bd2
https://doi.org/10.1063/5.0023080
https://doi.org/10.1063/5.0023080