Zobrazeno 1 - 10
of 109
pro vyhledávání: '"Carlos A. Meriles"'
Autor:
Matthias Pfender, Nabeel Aslam, Hitoshi Sumiya, Shinobu Onoda, Philipp Neumann, Junichi Isoya, Carlos A. Meriles, Jörg Wrachtrup
Publikováno v:
Nature Communications, Vol 8, Iss 1, Pp 1-12 (2017)
Dissipation of the sensor is a limiting factor in metrology. Here, Pfender et al. suppress this effect employing the nuclear spin of an NV centre for robust intermediate storage of classical NMR information, allowing then to record single-spin NMR sp
Externí odkaz:
https://doaj.org/article/3e22681a7a914245841cc60ec5e447d4
Autor:
Harishankar Jayakumar, Jacob Henshaw, Siddharth Dhomkar, Daniela Pagliero, Abdelghani Laraoui, Neil B. Manson, Remus Albu, Marcus W. Doherty, Carlos A. Meriles
Publikováno v:
Nature Communications, Vol 7, Iss 1, Pp 1-8 (2016)
Manipulating nitrogen vacancies in nitrogen-doped diamond is important for quantum information processing. Here the authors use a two-colour excitation to redistribute the localized trapping charges in type-1b diamonds.
Externí odkaz:
https://doaj.org/article/db4e6adc6fbc45198308215495d0f322
Autor:
Artur Lozovoi, YunHeng Chen, Gyorgy Vizkelethy, Edward Bielejec, Johannes Flick, Marcus W. Doherty, Carlos A. Meriles
Understanding carrier trapping in solids has proven key to semiconductor technologies but observations thus far have relied on ensembles of point defects, where the impact of neighboring traps or carrier screening is often important. Here, we investi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eb435a262374396fbb7a2454ce8f3bed
http://arxiv.org/abs/2306.01572
http://arxiv.org/abs/2306.01572
Autor:
Richard Monge, Tom Delord, Nicholas V. Proscia, Zav Shotan, Harishankar Jayakumar, Jacob Henshaw, Pablo R. Zangara, Artur Lozovoi, Daniela Pagliero, Pablo D. Esquinazi, Toshu An, Inti Sodemann, Vinod M. Menon, Carlos A. Meriles
Publikováno v:
Nano Letters
A broad effort is underway to understand and harness the interaction between superconductors and spin-active color centers with an eye on the realization of hybrid quantum devices and novel imaging modalities of superconducting materials. Most work,
Autor:
Artur Lozovoi, Edward S. Bielejec, Gyorgy Vizkelethy, Marcus W. Doherty, Harishankar Jayakumar, Johannes Flick, Damon Daw, Carlos A. Meriles
Publikováno v:
Nature Electronics. 4:717-724
Charge control of color centers in semiconductors promises opportunities for novel forms of sensing and quantum information processing. Here, we articulate confocal fluorescence microscopy and magnetic resonance protocols to induce and probe charge t
Autor:
Alexander Wood, Artur Lozovoi, Zi-Huai Zhang, Sachin Sharma, Gabriel I. López-Morales, Harishankar Jayakumar, Nathalie P. de Leon, Carlos A. Meriles
The silicon-vacancy (SiV) center in diamond is typically found in three stable charge states, SiV0, SiV- and SiV2-, but studying the processes leading to their formation is challenging, especially at room temperature, due to their starkly different p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d357a906aaa1934c9795eb808f88770a
http://arxiv.org/abs/2211.13141
http://arxiv.org/abs/2211.13141
Autor:
Santiago Bussandri, Gerónimo Sequeiros, Pablo R. Zangara, Rodolfo H. Acosta, Carlos A. Meriles
Publikováno v:
Physical Review Applied. 18
Autor:
Fernando Meneses, David F. Wise, Daniela Pagliero, Pablo R. Zangara, Siddharth Dhomkar, Carlos A. Meriles
Publikováno v:
Physical Review Applied. 18
Autor:
Carlos A. Meriles, Weidong Zhou, Gabriel Lopez-Morales, Harishankar Jayakumar, Vinod M. Menon, Nicholas V. Proscia, Xiaochen Ge, Zav Shotan
Publikováno v:
Nanophotonics. 9:2937-2944
Integration of quantum emitters in photonic structures is an important step in the broader quest to generate and manipulate on-demand single photons via compact solid-state devices. Unfortunately, implementations relying on material platforms that al
Autor:
Gabriel I. López-Morales, Vinod M. Menon, Carlos A. Meriles, Johannes Flick, Gustavo E. López, Alexander Hampel
We use density functional theory (DFT) to explore the physical properties of an $Er_{ W}$ point defect in monolayer $WS_{ 2}$. Our calculations indicate that electrons localize at the dangling bonds associated with a tungsten vacancy ($V_{W}$) and at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::74bbd37a8fd52f79248294178ba83872
http://arxiv.org/abs/2201.12455
http://arxiv.org/abs/2201.12455