Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Carlo Waldfried"'
Autor:
Diana Tsvetanova, David Mattson, J. de Luca, Kris Vanstreels, Roger Sonnemans, Marc Heyns, D. Radisic, Guy Vereecke, Ivan Berry, Tatjana N. Parac-Vogt, Paul Mertens, Carlo Waldfried, Rita Vos
Publikováno v:
Solid State Phenomena. 187:97-100
The removal of ion implanted photoresist (II-PR) after implantation of ultra shallow extension and halo regions is considered as one of the most challenging front-end-of-line (FEOL) processing steps for 32nm and beyond CMOS technology nodes. Commonly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::234e5ac7e8ca5f74a2ea51a591c72ed5
https://doi.org/10.4028/www.scientific.net/ssp.187.97
https://doi.org/10.4028/www.scientific.net/ssp.187.97
Publikováno v:
Solid State Phenomena. 187:93-96
Two alternative plasma strip processes were developed to meet the photoresist (PR) removal requirements of future technology nodes. Compared to traditional oxidizing chemistries, the new plasma strip approaches showed significantly lower silicon oxid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::060cee3bc5c304c711327f25da7a93fd
https://doi.org/10.4028/www.scientific.net/ssp.187.93
https://doi.org/10.4028/www.scientific.net/ssp.187.93
Autor:
Aseem Srivastava, Carlo Waldfried, Ivan Berry, Dwight Roh, Shijian Luo, Orlando Escorcia, Phillip Geissbühler
Publikováno v:
ECS Transactions. 34:433-438
This paper reports on the techniques employed to control the re-deposition of the partially dissociated organic photoresist (PR) by-products in advanced non-oxidizing strip processes developed to meet the PR removal requirements of future technology
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::425d9fb19f43c716c8e4f3d0c09017ba
https://doi.org/10.1149/1.3567617
https://doi.org/10.1149/1.3567617
Publikováno v:
ECS Transactions. 27:139-144
Post implant resist strip for sub-65 nm highdose implant (HDI) poses challenges with regard to Si substrate loss due to oxidation. In order to ensure the desired device characteristics, this loss must be kept to a minimum, typically less than 4A loss
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f80a008368eb77c05d969dbac0b4de82
https://doi.org/10.1149/1.3360609
https://doi.org/10.1149/1.3360609
Publikováno v:
ECS Transactions. 27:725-729
This paper reports on the investigation and development of two alternative plasma strip processes to meet the photoresist (PR) removal requirements of future technology nodes. Experimental results show that new plasma strip approaches have comparable
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a64e734e049967a060157b7002b27b46
https://doi.org/10.1149/1.3360701
https://doi.org/10.1149/1.3360701
Publikováno v:
Microelectronic Engineering. 86:155-159
Minimum substrate loss is required for resist strip of high dose, ultra shallow junction implant for source/drain extensions. Silicon surface oxidation of downstream plasma resist strip results in silicon recess of the source/drain extension regions.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::723dc51ccfdfe48300cffc1b4004c863
https://doi.org/10.1016/j.mee.2008.09.049
https://doi.org/10.1016/j.mee.2008.09.049
Autor:
Geert Mannaert, Carlo Waldfried, Ke Ping Han, A. Falepin, Liesbeth Witters, Denis Shamiryan, Werner Boullart, Ivan Berry, Shijian Luo, Roger Sonnemans
Publikováno v:
Solid State Phenomena. :253-256
The most advanced technology nodes require ultra shallow extension implants (low energy) which are very vulnerable to ash related substrate oxidation, silicon and dopant loss, which can result in a dramatic increase of the source/drain resistance and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1447367038b2a2c9b6bf2433a59766be
https://doi.org/10.4028/www.scientific.net/ssp.145-146.253
https://doi.org/10.4028/www.scientific.net/ssp.145-146.253
Publikováno v:
Solid State Phenomena. :249-252
High dose, ultra shallow junction implant resist strip requires minimal substrate loss and dopant loss. Silicon recess (silicon loss) under the source/drain (S/D) extensions increases the S/D extension resistance and decreases drive currents by chang
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e526f5fd055dce925cae50190e57d5e
https://doi.org/10.4028/www.scientific.net/ssp.145-146.249
https://doi.org/10.4028/www.scientific.net/ssp.145-146.249
Publikováno v:
Solid State Phenomena. :341-344
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15149b84d1680766b57016e0badced38
https://doi.org/10.4028/www.scientific.net/ssp.103-104.341
https://doi.org/10.4028/www.scientific.net/ssp.103-104.341
Publikováno v:
Europhysics Letters (EPL). 42:685-690
The thickness-dependent spin-polarized electronic structure of strained ultrathin and thin films of Gd has been investigated. The surface magnetic structure dominates the magnetic ordering of the ultrathin Gd films. With decreasing thickness some bul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc4f55b6cc2202e40a687f46feac13e5
https://doi.org/10.1209/epl/i1998-00306-3
https://doi.org/10.1209/epl/i1998-00306-3