Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Carlo Floresca"'
Autor:
Stephen McDonnell, Adam Pirkle, Moon J. Kim, Jiyoung Kim, Luigi Colombo, Greg Mordi, Carlo Floresca, Angelica Azcatl, Robert M. Wallace
Publikováno v:
Applied Surface Science. 294:95-99
The deposition of ultra-thin metal oxides on graphene is challenging due to the inert nature of the sp 2 bonded graphene lattice. The feasibility of e-beam deposition of hafnium and hafnium oxide layers as seeds for further growth by atomic layer dep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61fa9f9b13b16c3ab15734295044bea1
https://doi.org/10.1016/j.apsusc.2013.12.115
https://doi.org/10.1016/j.apsusc.2013.12.115
Autor:
Jinho Ahn, Luigi Colombo, Moon J. Kim, Carlo Floresca, Yves J. Chabal, Kyeongjae Cho, Pil-Ryung Cha, Jiyoung Kim, Greg Mordi, Geunsik Lee, Bong-Ki Lee, Robert M. Wallace, Srikar Jandhyala
Publikováno v:
ACS Nano. 6:2722-2730
Integration of graphene field-effect transistors (GFETs) requires the ability to grow or deposit high-quality, ultrathin dielectric insulators on graphene to modulate the channel potential. Here, we study a novel and facile approach based on atomic l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1617441b8595086da54b48cd5af91966
https://doi.org/10.1021/nn300167t
https://doi.org/10.1021/nn300167t
Autor:
Tony Balistreri, S.Y. Park, Jose L. Jimenez, C. Lee, M. J. Kim, Paul Saunier, Edward Beam, Carlo Floresca, U. Chowdhury
Publikováno v:
Microelectronics Reliability. 49:478-483
The AlGaN/GaN heterostructure HEMTs were epitaxially grown using MOCVD on semi-insulating SiC substrates. Standard III–V commercial production processing technology was used to fabricate the devices, which were then subjected to stress under accele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::586c0a13776250f949b8923bb034c1a5
https://doi.org/10.1016/j.microrel.2009.02.015
https://doi.org/10.1016/j.microrel.2009.02.015
Autor:
Christoph Sachse, David Kneppe, Karl Leo, Lars Müller-Meskamp, Aram Amassian, Nelli Weiß, Alexander Eychmüller, Carlo Floresca, Franz Selzer, Ludwig Bormann
Publikováno v:
Applied Physics Letters. 108:163302
We measure basic network parameters of silver nanowire (AgNW) networks commonly used as transparent conducting electrodes in organic optoelectronic devices. By means of four point probing with nanoprobes, the wire-to-wire junction resistance and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d05fa567ea3510bc0e6c6fcb495160a9
https://doi.org/10.1063/1.4947285
https://doi.org/10.1063/1.4947285
Autor:
Edward Beam, U. Chowdhury, Carlo Floresca, Tony Balistreri, S.Y. Park, C. Lee, Jose L. Jimenes, Moon J. Kim, Paul Sunier
Publikováno v:
2008 ROCS Workshop [Reliability of Compound Semiconductors Workshop].
HRTEM observation was conducted to find evidence of physical degradation in AlGaN/GaN heterostructure HEMT devices after life time testing. A strong relationship between electrical degradation and defects formation near the gate edge was observed. De
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c65a837d3f1a8ba500c24d6cef8022ac
https://doi.org/10.1109/rocs.2008.5483616
https://doi.org/10.1109/rocs.2008.5483616
Autor:
Jiyoung Kim, Srikar Jandhyala, Moon J. Kim, Greg Mordi, Carlo Floresca, Luigi Colombo, Robert M. Wallace, Stephen McDonnell
Publikováno v:
Applied Physics Letters. 100:193117
We demonstrate the characteristics of dual gated graphene field effect transistors using a thin layer (∼7 nm) of parylene-C as a top-gate dielectric. Our devices exhibit good dielectric properties with minimal doping, low leakage current (∼10−6
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5dde44e2d78d6399b940ef7fcbc57143
https://doi.org/10.1063/1.4711776
https://doi.org/10.1063/1.4711776
Publikováno v:
ECS Meeting Abstracts. :125-125
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5538921f8a92c9fc8473ade26c676fb3
https://doi.org/10.1149/ma2010-01/2/125
https://doi.org/10.1149/ma2010-01/2/125
Autor:
Adam Pirkle, Bongki Lee, Carlo Floresca, Stephen McDonnell, Luigi Colombo, Jiyoung Kim, Moon J. Kim, Yves Chabal, Robert M. Wallace
Publikováno v:
ECS Meeting Abstracts. :1202-1202
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::786a27bdf99a35c17cf73192ba8e8f5f
https://doi.org/10.1149/ma2010-01/23/1202
https://doi.org/10.1149/ma2010-01/23/1202
Autor:
Krutarth Trivedi, Sang-Jeoung Kim, M. J. Kim, Jae Hyun Kim, Hyun-Jin Kim, Carlo Floresca, Deog-Bae Kim, Walter Hu
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 27:3145
The authors demonstrate fabrication of ultrahigh aspect ratio nanotrenches, made by nanoimprint lithography and dimension reduction, as test bed shallow trench isolation structures for the 22nm semiconductor node. Polysilazane based spin-on dielectri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3e8c71c1e1e0c4f94aa63c02cb0cf79
https://doi.org/10.1116/1.3244626
https://doi.org/10.1116/1.3244626
Publikováno v:
Nano Letters; Apr2011, Vol. 11 Issue 4, p1412-1417, 6p