Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Carla Novo"'
Autor:
João Batista Junior, Arianne Pereira, Rudolf Buhler, André Perin, Carla Novo, Milene Galeti, Juliano Oliveira, Renato Giacomini
Publikováno v:
Microelectronics Journal. 120:105337
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c40ed8c586c90bc216e3175958b8bf6
https://doi.org/10.1016/j.mejo.2021.105337
https://doi.org/10.1016/j.mejo.2021.105337
Publikováno v:
IEEE Sensors Journal. 17:1641-1648
Thin-film lateral SOI p-i-n diodes can be used as photodetectors especially in the wavelength range of blue and ultra-violet (UV) radiation. Unlike vertical devices, lateral diodes can have depletion regions very close to the device surface, where th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6677fb1e0b8f05c1112fa0a6721aeac
https://doi.org/10.1109/jsen.2017.2647848
https://doi.org/10.1109/jsen.2017.2647848
Publikováno v:
2017 32nd Symposium on Microelectronics Technology and Devices (SBMicro).
The PIN sensor array in two technologies (bulk and SOI) is studied here, based on fabricated lateral PIN. Experimental data in non-radiation environment is used to adjust the models implemented in the numerical simulator that are latter used to evalu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e8bb63712050c91efe61c44cacaad81
https://doi.org/10.1109/sbmicro.2017.8113003
https://doi.org/10.1109/sbmicro.2017.8113003
Publikováno v:
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro).
This paper analyses lateral PIN diodes fabricated in the IBM 0.13 technology, intended to be used in a photodetector pixel structure in future developments. Experimental electrical characterization is used to adjust numerical simulation's models that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a092a1b82456e148c9a486598ff33d7
https://doi.org/10.1109/sbmicro.2016.7731365
https://doi.org/10.1109/sbmicro.2016.7731365
Publikováno v:
2016 31st Symposium on Microelectronics Technology and Devices (SBMicro).
Lateral PIN diodes can be used as photo-detectors in a wide wavelength range, including blue and UV radiation. Unlike vertical devices, lateral diodes can have depletion regions very close to the device surface, where the absorption of low-wavelength
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::883db35ebff6bdde1bdf634c13be412e
https://doi.org/10.1109/sbmicro.2016.7731366
https://doi.org/10.1109/sbmicro.2016.7731366
Publikováno v:
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).
This paper studies gated PIN diodes designed at Centro Universitario da FEI and fabricated at Global Foundries in the GF0.13 technology, using SiGe substrate and four gate setups. The analysis is made through experimental measurements and numerical s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c957e397dd1439beb682abcba8cedd87
https://doi.org/10.1109/ulis.2016.7440084
https://doi.org/10.1109/ulis.2016.7440084
Publikováno v:
2014 29th Symposium on Microelectronics Technology and Devices (SBMicro).
This paper presents a study of back-gate bias and temperature influence on the operation of lateral SOI PIN photodiodes. Experimental results showed that the operation mode of the photodiodes is affected by back-gate bias, modifying the photogenerate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50830016494e576ea49e0e4755ffedc3
https://doi.org/10.1109/sbmicro.2014.6940097
https://doi.org/10.1109/sbmicro.2014.6940097
Publikováno v:
2014 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS).
This paper addresses a simultaneous analysis of the intrinsic length (L 1 ) and the operating temperature, which are, respectively, a preeminent design variable and a fundamental boundary condition for lateral PIN photodiodes. The analysis is focused
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3262b71cf25e923cd2cb9c82bcdf8425
https://doi.org/10.1109/iccdcs.2014.7016170
https://doi.org/10.1109/iccdcs.2014.7016170
Autor:
Carla Novo, Renato Giacomini
Publikováno v:
2014 International Caribbean Conference on Devices, Circuits and Systems (ICCDCS).
This paper addresses a simultaneous analysis of the intrinsic length (L I ) variation and substrate doping concentration on the AC operation of multifinger SOI PIN photodiodes, in order to investigate the best performance for each application. The re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c78a7aad929d5469f281035a5da7cdf8
https://doi.org/10.1109/iccdcs.2014.7016151
https://doi.org/10.1109/iccdcs.2014.7016151
Autor:
Denis Flandre, Renato Giacomini, Carla Novo, Marcilei Guazzeli da Silveira, Aryan Afzalian, Joao Baptista
Publikováno v:
ECS Meeting Abstracts. :1345-1345
Abstract: This paper addresses, for the first time, an analysis of the total quantum efficiency of lateral SOI PIN photodiodes with different intrinsic lengths in the 300 to 500 K range simultaneously considering back-gate bias and temperature influe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0534e1d7939426c7f4ceb570c91843c9
https://doi.org/10.1149/ma2015-01/20/1345
https://doi.org/10.1149/ma2015-01/20/1345