Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Carla M. Nelson-Thomas"'
Autor:
C. Progler, S. Cassel, Matthew A. Thompson, R. Socha, Willard E. Conley, E. Schaefer, L. Dieu, K. Wampler, A. Verhappen, D. van den Broke, Chi-Min Yuan, L. Yu, Cesar M. Garza, J.-P. Kuijten, D. Mellenthin, Patrick K. Montgomery, Wei Wu, B. Kasprowicz, Kevin D. Lucas, E.L. Fanucchi, W. Pijnenburg, G. Hughes, Kirk J. Strozewski, Carla M. Nelson-Thomas, Russell L. Carter, K. Brankner, J.G. Maltabes
Publikováno v:
2002 International Microprocesses and Nanotechnology Conference, 2002. Digest of Papers..
Summary form only given. With half pitch k factors rapidly approaching sub 0.4, many lithography groups have looked seriously into alternative patterning and mask techniques. The semiconductor industry continues to explore numerous techniques for pri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a97c273de83dcd3fd9572059d46d06ba
https://doi.org/10.1109/imnc.2002.1178659
https://doi.org/10.1109/imnc.2002.1178659
Autor:
Kurt E. Wampler, Linda Yu, Thomas Laidig, Erika Schaefer, David J. Gerold, John S. Petersen, Lloyd C. Litt, Douglas Van Den Broeke, Wei Wu, Robert John Socha, Bernard J. Roman, J. Fung Chen, Kevin D. Lucas, Christopher J. Progler, Mark John Maslow, Carla M. Nelson-Thomas, Will Conley, Stephen Hsu, Bryan S. Kasprowicz, Shawn Cassel
Publikováno v:
SPIE Proceedings.
Each generation of semiconductor device technology drive new and interesting resolution enhancement technology (RET’s). The race to smaller and smaller geometry’s has forced device manufacturers to k1’s approaching 0.40. The authors have been i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf75daacbacda507a2d3e6d20c6185c2
https://doi.org/10.1117/12.485515
https://doi.org/10.1117/12.485515
Autor:
Sergei V. Postnikov, Carla M. Nelson-Thomas, Kyle Patterson, Chi-Min Yuan, Lloyd C. Litt, Karl Wimmer, Matthew A. Thompson, Patrick K. Montgomery, Russell L. Carter, Kevin D. Lucas
Publikováno v:
SPIE Proceedings.
Due to the challenging design rule and CD control requirements of the 100 nm device generation, a large number of complex patterning techniques are likely to be used for random logic devices. The complexity of these techniques places considerable str
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6f38e2320c83497c997b58ae82bf544
https://doi.org/10.1117/12.474563
https://doi.org/10.1117/12.474563
Autor:
Carla M. Nelson-Thomas, Ruoping Wang, Chong-Cheng Fu, Michael E. Kling, Matthew A. Thompson, Nigel Cave
Publikováno v:
SPIE Proceedings.
Gate patterning has always been held to tight specifications for CD variation compared to other layers. Specifically, the gate layer is more concerned with the total CD variations including Across Chip Linewidth Variation (ACLV), Across Wafer Linewid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffe149292670e0402e3e3ee3076d4de6
https://doi.org/10.1117/12.435746
https://doi.org/10.1117/12.435746
Publikováno v:
SPIE Proceedings.
Complementary phase shift processes (c:PSM) have shown great promise for practical implementation of alternating phase shift technology. The incorporation of both binary and phase shift masks into a single resist process requires careful consideratio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1423541420c52b05b26ed2549cae42ce
https://doi.org/10.1117/12.435774
https://doi.org/10.1117/12.435774
Autor:
Nigel Cave, Carla M. Nelson-Thomas, John L. Sturtevant, Nancy Benavides, John R. Alvis, Douglas J. Bonser, Kyle Patterson, Karen L. Turnquest, William D. Taylor
Publikováno v:
SPIE Proceedings.
Photoresist line edge roughness (LER) has long been feared as a potential limitation to the application of various patterning technologies to actual devices. While this concern seems reasonable, experimental verification has proved elusive and thus L
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15bdd1a04407b4462960dfcb6e4ad13f
https://doi.org/10.1117/12.436808
https://doi.org/10.1117/12.436808
Autor:
S. Deneault, Susan C. Palmateer, Theodore M. Lyszczarz, Anthony R. Forte, Carla M. Nelson-Thomas, Susan G. Cann
Publikováno v:
SPIE Proceedings.
Advanced scanning electron and atomic force microscopy technique have been developed to quantify line-edge and sidewall roughness in patterned resist and silicon feature with nanometer scale accuracy. Both techniques are able to follow small changes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::246c9dc9004241c265556a24797fa84c
https://doi.org/10.1117/12.350860
https://doi.org/10.1117/12.350860
Autor:
Martin McCallum, Alan Stephen, Jeff Meute, Jeff D. Byers, Kim Dean, Peter Zandbergen, Gilles R. Amblard, Carla M. Nelson-Thomas
Publikováno v:
SPIE Proceedings.
The goal of this paper is to define a 'state of the art' of the lithographic performance obtained with an advanced 193 nm single layer resist process, for 150 nm technology generation specification and below. Even if the goal of the paper is not to p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c873738544fb06aaaa8056c0e16e8057
https://doi.org/10.1117/12.350270
https://doi.org/10.1117/12.350270
Autor:
Susan G. Cann, Roderick R. Kunz, Scott P. Doran, Jane E. Curtin, Theodore M. Lyszczarz, Lynn M. Eriksen, Anthony R. Forte, Carla M. Nelson-Thomas, Susan C. Palmateer, Margaret B. Stern
Publikováno v:
SPIE Proceedings.
We have characterized line-edge roughness in single-layer, top-surface imaging, bilayer and trilayer resist schemes. The results indicate that in dry developed resists there is inherent line-edge roughness which results from the etch mask, resist (pl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::516c92f2a6660131de63d61372cda5f5
https://doi.org/10.1117/12.312395
https://doi.org/10.1117/12.312395
Autor:
Lloyd C. Litt, Carla M. Nelson-Thomas, Chong-Cheng Fu, Kent G. Green, John A. Allgair, John L. Sturtevant, Mark William Barrick, John Maltabes, Robert R. Hershey, John Singelyn, Bernard J. Roman
Publikováno v:
SPIE Proceedings.
DUV scanning exposure systems have been steadily gaining market acceptance for the past five years, and soon, all major suppliers will offer 248-nm scanning tools. One of the major reasons for the emergence of this technology has been the purported i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1a183edb1cccdbb47b8eebc0982940a
https://doi.org/10.1117/12.276024
https://doi.org/10.1117/12.276024