Zobrazeno 1 - 10
of 216
pro vyhledávání: '"Carl-Mikael Zetterling"'
Autor:
Shuoben Hou, Muhammad Shakir, Per-Erik Hellstrom, Bengt Gunnar Malm, Carl-Mikael Zetterling, Mikael Ostling
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 116-121 (2020)
An image sensor based on wide band gap silicon carbide (SiC) has the merits of high temperature operation and ultraviolet (UV) detection. To realize a SiC-based image sensor the challenge of opto-electronic on-chip integration of SiC photodetectors a
Externí odkaz:
https://doaj.org/article/37e6bee9a1fd4f1aa7450442ba24237a
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 139-145 (2018)
4H-SiC p-i-n photodiodes with various mesa areas (40 000 μm2, 2500 μm2, 1600 μm2, and 400 μm2) have been fabricated. Both C-V and I-V characteristics of the photodiodes have been measured at room temperature, 200 °C, 400 °C, and 500 °C. The ca
Externí odkaz:
https://doaj.org/article/7b6eff56f9434679a6a8a66d1260ac3e
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 5, Iss 3, Pp 147-148 (2017)
I’m very happy with the development of J-EDS since the start about 4 years ago. We see a constant increase in submitted high quality manuscripts in a broader area. This calls of course for more work for our volunteering editors. My ambition is to a
Externí odkaz:
https://doaj.org/article/5c8f94824eaa4a9db41659fb78c6ee2d
Publikováno v:
IEEE Spectrum. 58:24-30
There Were Few bright spots in the pandemic summer of 2020. One of the most dazzling was the flight of U.S. astronauts to the International Space Station and their safe return to Earth aboard a commercial spacecraft from SpaceX. This demonstration wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d37b10ff17bc1178bd17d8c331a7fe6
https://doi.org/10.1109/mspec.2021.9423815
https://doi.org/10.1109/mspec.2021.9423815
Publikováno v:
Materials Science Forum. 1004:642-651
Control of defects at or near the MOS interface is paramount for device performance optimization. The SiC MOS system is known to exhibit two types of MOS defects, defects at the SiO2/SiC interface and defects inside of the gate oxide that can trap ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::289bd046ca5ed684475673cc37896c47
https://doi.org/10.4028/www.scientific.net/msf.1004.642
https://doi.org/10.4028/www.scientific.net/msf.1004.642
Autor:
Muhammad Shakir, Alex Metreveli, Carl-Mikael Zetterling, Homer Alan Mantooth, Shuoben Hou, Arman Ur Rashid
Publikováno v:
IEEE Transactions on Electron Devices. 66:3734-3739
This paper reports an industry standard monolithic 555-timer circuit designed and fabricated in the in-house silicon carbide (SiC) low-voltage bipolar technology. This paper demonstrates the 555-timer integrated circuits (ICs) characterization in bot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b0e06dead8b75a5202a9d377f6fca85
https://doi.org/10.1109/ted.2019.2925915
https://doi.org/10.1109/ted.2019.2925915
Autor:
Carl-Mikael Zetterling, Arman Ur Rashid, Robert Murphree, John R. Fraley, Asif Faruque, H. Alan Mantooth, Maksudul Hossain, Sajib Roy, Brett Sparkman, Alex Metreveli, Affan Abbasi
Publikováno v:
IEEE Transactions on Electron Devices. 66:3764-3770
This paper presents functional high-temperature analog circuits in silicon carbide bipolar technology. The circuits will collectively form the analog signal conditioning block for a wireless telemetry system in an extreme environment (above 400°C).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd8fada5f632d25c93aea39eec80c75d
https://doi.org/10.1109/ted.2019.2928484
https://doi.org/10.1109/ted.2019.2928484
Autor:
Takeshi Ohshima, Tomonori Maeda, Shin-Ichiro Kuroki, Seiji Ishikawa, Mikael Östling, Hiroshi Sezaki, Takahiro Makino, Jun Inoue, Carl-Mikael Zetterling
Publikováno v:
Materials Science Forum. 963:837-840
Low-parasitic-capacitance 4H-SiC pMOSFETs using pseudo-self-aligned process were demonstrated for high-frequency CMOS inverters. In these pMOSFETs, device characteristics including parasitic capacitances (gate-source, gate-drain capacitance) were inv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a507db8acc3e0b532ef789a0f89c1677
https://doi.org/10.4028/www.scientific.net/msf.963.837
https://doi.org/10.4028/www.scientific.net/msf.963.837
Autor:
Tomoyasu Ishii, Carl-Mikael Zetterling, Shin-Ichiro Kuroki, Tomonori Maeda, Takahiro Makino, Takeshi Ohshima, Seiji Ishikawa, Mikael Östling, Hiroshi Sezaki
Publikováno v:
Materials Science Forum. 963:613-616
Submicron 4H-SiC MOSFETs are attractive for high frequency operation of 4H-SiC integrated circuits. However, the short channel effects, such as threshold voltage lowering, would be induced at the short-channel devices. In this work, short channel eff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52635d8fcd274e864a569ecb09883a5f
https://doi.org/10.4028/www.scientific.net/msf.963.613
https://doi.org/10.4028/www.scientific.net/msf.963.613
Publikováno v:
Materials Science Forum. 963:818-822
This work presents the design, in-house fabrication, and electrical characterization of a monolithic medium scale integrated (MSI) D-type flip-flop (DFF). It consists of 65 n-p-n bipolar transistors and 49 integrated resistors. The monolithic bipolar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8188c1772d1b770846634119efacd0b4
https://doi.org/10.4028/www.scientific.net/msf.963.818
https://doi.org/10.4028/www.scientific.net/msf.963.818