Výsledky vyhledávání - "Carl W. Chang"

Upscaling of 500 °C Durable SiC JFET-R Integrated Circuits

Autor: Lawrence C. Greer, Dorothy Lukco, Norman F. Prokop, Glenn M. Beheim, Michael J. Krasowski, Philip G. Neudeck, Carl W. Chang, David J. Spry, Liang-Yu Chen

Publikováno v: Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2021:000064-000068

At HiTEC 2018, NASA Glenn Research Center reported the first demonstration of yearlong 500 °C operation of ceramic-packaged “Generation 10” ~200-transistor integrated circuits (ICs) based on two-level interconnect silicon carbide (4H-SiC) juncti

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::08cc16ed5243f72366ce95a2d2f714f5
https://doi.org/10.4071/2380-4491.2021.hitec.000064

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Experimental Study on Mitigation of Lifetime-Limiting Dielectric Cracking in Extreme Temperature 4H-SiC JFET Integrated Circuits

Autor: Philip G. Neudeck, David J. Spry, Carl W. Chang

Publikováno v: Materials Science Forum. 1004:1148-1155

While NASA Glenn Research Center’s “Generation 10” 4H-SiC Junction Field Effect Transistor (JFET) integrated circuits (ICs) have uniquely demonstrated 500 °C electrical operation for durations of over a year, this experimental work has also re

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::db080b3ad4cdd481a7781e6c1eaf8bd0
https://doi.org/10.4028/www.scientific.net/msf.1004.1148

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Year-long 500°C Operational Demonstration of Up-scaled 4H-SiC JFET Integrated Circuits

Autor: Liang-Yu Chen, Glenn M. Beheim, Philip G. Neudeck, David J. Spry, Carl W. Chang, Michael J. Krasowski, Norman F. Prokop

Publikováno v: Journal of Microelectronics and Electronic Packaging. 15:163-170

This work describes recent progress in the design, processing, and testing of significantly up-scaled complex 500°C–durable 4H-SiC junction field effect transistor (JFET) integrated circuit (IC) technology with two-level interconnect undergoing de

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9031ebf14bab9900baa567e91a0d87f5
https://doi.org/10.4071/imaps.729648

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Prolonged 500°C Operation of 100+ Transistor Silicon Carbide Integrated Circuits

Autor: David J. Spry, Carl W. Chang, Glenn M. Beheim, Dorothy Lukco, Norman F. Prokop, Michael J. Krasowski, Liang-Yu Chen, Philip G. Neudeck

Publikováno v: Materials Science Forum. 924:949-952

This report describes more than 5000 hours of successful 500 °C operation of semiconductor integrated circuits (ICs) with more than 100 transistors. Multiple packaged chips with two different 4H-SiC junction field effect transistor (JFET) technology

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::98a8c5cca3944571047dd6278f04137e
https://doi.org/10.4028/www.scientific.net/msf.924.949

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Yearlong 500 °C Operational Demonstration of Up-scaled 4H-SiC JFET Integrated Circuits

Autor: Philip G. Neudeck, David J. Spry, Michael J. Krasowski, Norman F. Prokop, Glenn M. Beheim, Liang-Yu Chen, Carl W. Chang

Publikováno v: Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2018:000071-000078

This work describes recent progress in the design, processing, and testing of significantly up-scaled 500 °C durable 4H-SiC junction field effect transistor (JFET) integrated circuit (IC) technology with two-level interconnect undergoing development

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::864ab10d522dcc00410d2a28ed3c0a57
https://doi.org/10.4071/2380-4491-2018-hiten-000071

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Experimentally Observed Electrical Durability of 4H-SiC JFET ICs Operating from 500 °C to 700 °C

Autor: David J. Spry, Liang-Yu Chen, Glenn M. Beheim, Philip G. Neudeck, Dorothy Lukco, Carl W. Chang

Publikováno v: Materials Science Forum. 897:567-570

Prolonged 500 °C to 700 °C electrical testing data from 4H-SiC junction field effect transistor (JFET) integrated circuits (ICs) are combined with post-testing microscopic studies in order to gain more comprehensive understanding of the durability

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::dd4961e55f8d9423d6b47c0e4625ef9f
https://doi.org/10.4028/www.scientific.net/msf.897.567

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Evidence of Processing Non-Idealities in 4H-SiC Integrated Circuits Fabricated with Two Levels of Metal Interconnect

Autor: David J. Spry, Liang-Yu Chen, Carl W. Chang, Laura J. Evans, Dorothy Lukco, Glenn M. Beheim, Philip G. Neudeck

Publikováno v: Materials Science Forum. 858:1112-1116

The fabrication and prolonged 500 °C electrical testing of 4H-SiC junction field effect transistor (JFET) integrated circuits (ICs) with two levels of metal interconnect is reported in another submission to this conference proceedings. While some ci

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3ba4e1ec31a0dc8d58ec63a1ed7fa5d8
https://doi.org/10.4028/www.scientific.net/msf.858.1112

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Processing and Prolonged 500 °C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal Interconnect

Autor: Glenn M. Beheim, Norman F. Prokop, Michael J. Krasowski, Dorothy Lukco, David J. Spry, Liang-Yu Chen, Philip G. Neudeck, Carl W. Chang

Publikováno v: Materials Science Forum. 858:908-912

Complex integrated circuit (IC) chips rely on more than one level of interconnect metallization for routing of electrical power and signals. This work reports the processing and testing of 4H-SiC junction field effect transistor (JFET) prototype IC�

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::56abb37f6d99bb1f638d41a3c12c490a
https://doi.org/10.4028/www.scientific.net/msf.858.908

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Prolonged 500 °C Demonstration of 4H-SiC JFET ICs With Two-Level Interconnect

Autor: David J. Spry, Dorothy Lukco, Glenn M. Beheim, Philip G. Neudeck, Liang-Yu Chen, Carl W. Chang

Publikováno v: IEEE Electron Device Letters. 37:625-628

This letter reports fabrication and testing of integrated circuits (ICs) with two levels of interconnect that consistently achieve greater than 1000 h of stable electrical operation at 500 °C in air ambient. These ICs are based on 4H-SiC junction fi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fb1259eb7ca82da672ba69d9e31800f8
https://doi.org/10.1109/led.2016.2544700

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Processing and Characterization of Thousand-Hour 500 °C Durable 4H-SiC JFET Integrated Circuits

Autor: Glenn M. Beheim, Michael J. Krasowski, Philip G. Neudeck, Norman F. Prokop, Liang-Yu Chen, David J. Spry, Dorothy Lukco, Carl W. Chang

Publikováno v: Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2016:000249-000256

This work reports fabrication and testing of integrated circuits (ICs) with two levels of interconnect that consistently achieve greater than 1000 hours of stable electrical operation at 500 °C in air ambient. These ICs are based on 4H-SiC junction

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b12f2ad89184326db8d7e8db4beff5c0
https://doi.org/10.4071/2016-hitec-249

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