Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Carl J. Wordelman"'
Publikováno v:
VLSI Design, Vol 6, Iss 1-4, Pp 147-153 (1998)
This paper discusses the various hierarchy levels that are possible when the full band structure is considered. At the highest level, the scatterings are treated using complete k-k’ transition rates, which entail extremely memory intensive computat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::971098f282e6fc4cd5ecd86c987701c7
https://doaj.org/article/b91957af3897467e9a0fdf0464f2a6ba
https://doaj.org/article/b91957af3897467e9a0fdf0464f2a6ba
Autor:
Carl J. Wordelman, Edmund K. Banghart
Publikováno v:
SPIE Proceedings.
Using Synopsys TCAD tools, several examples of advanced process and device modeling are presented for full-frame CCD image sensors. The topics covered in these examples include channel potential, charge capacity, charge transport, and charge blooming
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a941d99bd2964f6a5a13a894dc21f8ff
https://doi.org/10.1117/12.591143
https://doi.org/10.1117/12.591143
Publikováno v:
Proceedings of SPIE; 4/19/2019, Vol. 11046, p1-14, 14p
Autor:
Wordelman, Carl J., Ravaioli, Umberto
Publikováno v:
IEEE Transactions on Electron Devices; Feb2000, Vol. 47 Issue 2, p410, 7p, 2 Black and White Photographs, 3 Diagrams, 3 Graphs