Quantitative electron energy loss spectroscopy of Si nanoclusters embedded in SiO x

Autor: Nicotra, G., Bongiorno, C., Caristia, L., Coffa, S., Spinella, C.

Publikováno v: In Microelectronic Engineering 2007 84(3):486-489

The influence of hydrogen and nitrogen on the formation of Si nanoclusters embedded in sub-stoichiometric silicon oxide layers

Autor: Caristia L., Nicotra G., Bongiorno., Costa N., Ravesi S., Coffa S., De Bastiani R., Grimaldi., MG., Spinella C.

Publikováno v: Microelectronics and reliability 47 (2007): 777–780. doi:10.1016/j.microrel.2007.01.056
info:cnr-pdr/source/autori:Caristia L.; Nicotra G.; Bongiorno.; C.; Costa N.; Ravesi S.; Coffa S.; De Bastiani R.; Grimaldi.; MG.; Spinella C./titolo:The influence of hydrogen and nitrogen on the formation of Si nanoclusters embedded in sub-stoichiometric silicon oxide layers/doi:10.1016%2Fj.microrel.2007.01.056/rivista:Microelectronics and reliability/anno:2007/pagina_da:777/pagina_a:780/intervallo_pagine:777–780/volume:47

This work reports the study concerning the influence of the preparation conditions on the structure of silicon rich oxide (SRO) deposited by PECVD method by which the structural properties of the film are strictly related. In particular we investigat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d8981cf053e07a18e8a2f504f0ed77cd
https://publications.cnr.it/doc/36034

Si-based materials and devices for light emission in silicon

Autor: Castagna M.E., Coffa S., Monaco M., Caristia L., Messina A., Mangano R., Bongiorno C.

Publikováno v: 16 (2003): 547–553.
info:cnr-pdr/source/autori:Castagna M.E., Coffa S., Monaco M., Caristia L., Messina A., Mangano R., Bongiorno C./titolo:Si-based materials and devices for light emission in silicon/doi:/rivista:/anno:2003/pagina_da:547/pagina_a:553/intervallo_pagine:547–553/volume:16

We report on the fabrication and performances of extremely efficient Si-based light sources. The devices consist of MOS structures with erbium (Er) implanted in the thin gate oxide. The devices exhibit strong 1.54 microns electroluminescence (EL) at

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::ac5650d0d2c9c96fe2345592d830fa4e
http://www.cnr.it/prodotto/i/35316

Quantum Dot Materials and Devices for Light Emission in Silicon.

Autor: Castagna, M.E., Coffa, S., Caristia, L., Messina, A., Bongiorno, C.

Publikováno v: 32nd European Solid-State Device Research Conference; 2002, p439-442, 4p

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