Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Carine Alaerts"'
Publikováno v:
Solid State Phenomena. :89-92
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec10f4bb0bf65d8f93af2df9a3769cec
https://doi.org/10.4028/www.scientific.net/ssp.65-66.89
https://doi.org/10.4028/www.scientific.net/ssp.65-66.89
Publikováno v:
Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247).
The introduction of low k materials has introduced the need for new dry etch processes. The requirements for these dry etch processes are reviewed. Basic etch characteristics, under both afterglow and RIE conditions, for different low k polymers are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d4ac4b1fe096fdaf31520b6012bdbc1
https://doi.org/10.1109/iitc.1999.787089
https://doi.org/10.1109/iitc.1999.787089
Autor:
J. Van Aelst, Sergio Lucero, Werner Boullart, Geert Mannaert, Erik Sleeckx, Iwan Vervoort, R. A Donaton, Joost Waeterloos, Herbert Struyf, B. Sijmus, Marc Schaekers, Rudy Caluwaerts, Z. Tokel, Francesca Iacopi, Serge Vanhaelemeersch, M. Van Hove, Carine Alaerts, Marc Meuris, I. Vos, Karen Maex, J. Steenbergen, D.W. Castillo
Publikováno v:
Proceedings of the IEEE 2001 International Interconnect Technology Conference (Cat. No.01EX461).
The feasibility of integrating a SiLK* Semiconductor Dielectric film (*trademark of The Dow Chemical Company) that contains closed pores was studied using a single damascene test vehicle. The study focussed on tool qualification, process set-up and s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f6ad1a45f828e25bffb3cf0bee1251c
https://doi.org/10.1109/iitc.2001.930076
https://doi.org/10.1109/iitc.2001.930076
Publikováno v:
MRS Proceedings. 511
The etch characteristics of the low-k dielectrics DVS BCB (BCB hereafter) and SILK in oxygen/fluorine plasmas are studied. In an O2/NF3 plasma afterglow, the etch rate of both polymers first increase linearly with increasing NF3 concentration, then d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6b44fc470d244da7ef725c2ac758bee
https://doi.org/10.1557/proc-511-247
https://doi.org/10.1557/proc-511-247