Zobrazeno 1 - 10
of 500
pro vyhledávání: '"Capellini Giovanni"'
Autor:
Talamas Simola Enrico, Ortolani Michele, Di Gaspare Luciana, Capellini Giovanni, De Seta Monica, Virgilio Michele
Publikováno v:
Nanophotonics, Vol 13, Iss 10, Pp 1781-1791 (2024)
We present a theoretical investigation of guided second harmonic generation at THz frequencies in SiGe waveguides embedding n-type Ge/SiGe asymmetric coupled quantum wells to engineer a giant second order nonlinear susceptibility. A characteristic of
Externí odkaz:
https://doaj.org/article/9a99e09ac45e4afcb01f8675bf07f7b5
Autor:
Campagna Elena, Talamas Simola Enrico, Venanzi Tommaso, Berkmann Fritz, Corley-Wiciak Cedric, Nicotra Giuseppe, Baldassarre Leonetta, Capellini Giovanni, Di Gaspare Luciana, Virgilio Michele, Ortolani Michele, De Seta Monica
Publikováno v:
Nanophotonics, Vol 13, Iss 10, Pp 1793-1802 (2024)
A parabolic potential that confines charge carriers along the growth direction of quantum wells semiconductor systems is characterized by a single resonance frequency, associated to intersubband transitions. Motivated by fascinating quantum optics ap
Externí odkaz:
https://doaj.org/article/ec7858f2ade342178c5743bc8ccbefb7
Autor:
Bikerouin, Mouad, Marzegalli, Anna, Spirito, Davide, Schaffar, Gerald J. K., Bongiorno, Corrado, Rovaris, Fabrizio, Zaghloul, Mohamed, Corley-Wiciak, Agnieszka Anna, Mio, Antonio M., Miglio, Leo, Maier-Kiener, Verena, Capellini, Giovanni, Scalise, Emilio
We present a comprehensive study on the formation of micrometer-sized, textured hexagonal diamond silicon (hd-Si) crystals via nanoindentation followed by annealing. Utilizing advanced characterization techniques such as polarized Raman spectroscopy,
Externí odkaz:
http://arxiv.org/abs/2410.08372
Autor:
Wilflingseder, Christoph, Aberl, Johannes, Navarette, Enrique Prado, Hesser, Günter, Groiss, Heiko, Liedke, Maciej O., Butterling, Maik, Wagner, Andreas, Hirschmann, Eric, Corley-Wiciak, Cedric, Zoellner, Marvin H., Capellini, Giovanni, Fromherz, Thomas, Brehm, Moritz
Germanium (Ge), the next-in-line group-IV material, bears great potential to add functionality and performance to next-generation nanoelectronics and solid-state quantum transport based on silicon (Si) technology. Here, we investigate the direct epit
Externí odkaz:
http://arxiv.org/abs/2410.03295
Autor:
Aberl, Johannes, Navarrete, Enrique Prado, Karaman, Merve, Enriquez, Diego Haya, Wilflingseder, Christoph, Salomon, Andreas, Primetzhofer, Daniel, Schubert, Markus Andreas, Capellini, Giovanni, Fromherz, Thomas, Deák, Peter, Udvarhelyi, Péter, Song, Li, Gali, Ádám, Brehm, Moritz
Silicon-based color-centers (SiCCs) have recently emerged as quantum-light sources that can be combined with telecom-range Si Photonics platforms. Unfortunately, using current SiCC fabrication, deterministic control over the vertical emitter position
Externí odkaz:
http://arxiv.org/abs/2402.19227
Autor:
Corley-Wiciak, Agnieszka Anna, Ryzhak, Diana, Zoellner, Marvin Hartwig, Manganelli, Costanza Lucia, Concepción, Omar, Skibitzki, Oliver, Grützmacher, Detlev, Buca, Dan, Capellini, Giovanni, Spirito, Davide
Publikováno v:
Phys. Rev. Mater. 8 (2024) 023801
Temperature dependence of vibrational modes in semiconductors depends on lattice thermal expansion and anharmonic phonon-phonon scattering. Evaluating the two contributions from experimental data is not straightforward, especially for epitaxial layer
Externí odkaz:
http://arxiv.org/abs/2402.02967
Autor:
Bizzarri, Gabriele, Gianani, Ilaria, Manrique, Mylenne, Berardi, Vincenzo, Capellini, Giovanni, Bruni, Fabio, Barbieri, Marco
Quantum steering captures the ability of one party, Alice, to control through quantum correlations the state at a distant location, Bob, with superior ability than allowed by a local hidden state model. Verifying the presence of quantum steering has
Externí odkaz:
http://arxiv.org/abs/2401.17431
Autor:
Corley-Wiciak, Agnieszka Anna, Chen, Shunda, Concepción, Omar, Zoellner, Marvin Hartwig, Grützmacher, Detlev, Buca, Dan, Li, Tianshu, Capellini, Giovanni, Spirito, Davide
Publikováno v:
PhysRevApplied. 20 (2023) 024021
The local ordering of atoms in alloys directly has a strong impact on their electronic and optical properties. This is particularly relevant in nonrandom alloys, especially if they are deposited using far from the equilibrium processes, as is the cas
Externí odkaz:
http://arxiv.org/abs/2305.06005
Autor:
Ryzhak, Diana, Corley-Wiciak, Agnieszka Anna, Steglich, Patrick, Yamamoto, Yuji, Frigerio, Jacopo, Giani, Raffaele, De Iacovo, Andrea, Spirito, Davide, Capellini, Giovanni
Publikováno v:
In Materials Science in Semiconductor Processing 15 June 2024 176
Autor:
Stark, David, Mirza, Muhammad, Persichetti, Luca, Montanari, Michele, Markmann, Sergej, Beck, Mattias, Grange, Thomas, Birner, Stefan, Virgilio, Michele, Ciano, Chiara, Ortolani, Michele, Corley, Cedric, Capellini, Giovanni, Di Gaspare, Luciana, De Seta, Monica, Paul, Douglas J., Faist, Jérôme, Scalari, Giacomo
Publikováno v:
Appl. Phys. Lett. 118, 101101 (2021)
We report electroluminescence originating from L-valley transitions in n-type Ge/Si$_{0.15}$Ge$_{0.85}$ quantum cascade structures centered at 3.4 and 4.9 THz with a line broadening of $\Delta f/f \approx 0.2$. Three strain-compensated heterostructur
Externí odkaz:
http://arxiv.org/abs/2101.05518