Zobrazeno 1 - 10
of 688
pro vyhledávání: '"Capellini G."'
Autor:
Corley-Wiciak, C., Zoellner, M. H., Zaitsev, I., Anand, K., Zatterin, E., Yamamoto, Y., Corley-Wiciak, A. A., Reichmann, F., Langheinrich, W., Schreiber, L. R., Manganelli, C. L., Virgilio, M., Richter, C., Capellini, G.
Publikováno v:
Phys. Rev. Applied 20, 024056, 2023
The lattice strain induced by metallic electrodes can impair the functionality of advanced quantum devices operating with electron or hole spins. Here we investigate the deformation induced by CMOS-manufactured titanium nitride electrodes on the latt
Externí odkaz:
http://arxiv.org/abs/2304.09120
Autor:
Grange, T., Mukherjee, S., Capellini, G., Montanari, M., Persichetti, L., Di Gaspare, L., Birner, S., Attiaoui, A., Moutanabbir, O., Virgilio, M., De Seta, M.
Publikováno v:
Phys. Rev. Applied 13, 044062 (2020)
We develop a generalized theory for the scattering process produced by interface roughness on charge carriers and which is suitable for any semiconductor heterostructure. By exploiting our experimental insights into the three-dimensional atomic lands
Externí odkaz:
http://arxiv.org/abs/2002.00851
Autor:
Lodari, M., Tosato, A., Sabbagh, D., Schubert, M. A., Capellini, G., Sammak, A., Veldhorst, M., Scappucci, G.
Publikováno v:
Phys. Rev. B 100, 041304 (2019)
We report density-dependent effective hole mass measurements in undoped germanium quantum wells. We are able to span a large range of densities ($2.0-11\times10^{11}$ cm$^{-2}$) in top-gated field effect transistors by positioning the strained buried
Externí odkaz:
http://arxiv.org/abs/1905.08064
Autor:
Grange, T., Stark, D., Scalari, G., Faist, J., Persichetti, L., Di Gaspare, L., De Seta, M., Ortolani, M., Paul, D. J., Capellini, G., Birner, S., Virgilio, M.
n-type Ge/SiGe terahertz quantum cascade laser are investigated using non-equilibrium Green's functions calculations. We compare the temperature dependence of the terahertz gain properties with an equivalent GaAs/AlGaAs QCL design. In the Ge/SiGe cas
Externí odkaz:
http://arxiv.org/abs/1811.12879
Autor:
Montanari, M., Virgilio, M., Manganelli, C. L., Zaumseil, P., Zoellner, M. H., Hou, Y., Schubert, M. A., Persichetti, L., Di Gaspare, L., De Seta, M., Vitiello, E., Bonera, E., Pezzoli, F., Capellini, G.
Publikováno v:
Phys. Rev. B 98, 195310 (2018)
In this paper we investigate the structural and optical properties of few strain-unbalanced multiple Ge/GeSi quantum wells pseudomorphically grown on GeSi reverse-graded substrates. The obtained high epitaxial quality demonstrates that strain symmetr
Externí odkaz:
http://arxiv.org/abs/1811.08665
Autor:
Sammak, A., Sabbagh, D., Hendrickx, N. W., Lodari, M., Wuetz, B. Paquelet, Yeoh, L., Bollani, M., Virgilio, M., Schubert, M. A., Zaumseil, P., Capellini, G., Veldhorst, M., Scappucci, G.
Publikováno v:
Adv. Funct. Mater. 29, 1807613 (2019)
Buried-channel semiconductor heterostructures are an archetype material platform to fabricate gated semiconductor quantum devices. Sharp confinement potential is obtained by positioning the channel near the surface, however nearby surface states degr
Externí odkaz:
http://arxiv.org/abs/1809.02365
Autor:
Hendrickx, N. W., Franke, D. P., Sammak, A., Kouwenhoven, M., Sabbagh, D., Yeoh, L., Li, R., Tagliaferri, M. L. V., Virgilio, M., Capellini, G., Scappucci, G., Veldhorst, M.
Publikováno v:
Nature Communications 9, 2835 (2018)
Superconductors and semiconductors are crucial platforms in the field of quantum computing. They can be combined to hybrids, bringing together physical properties that enable the discovery of new emergent phenomena and provide novel strategies for qu
Externí odkaz:
http://arxiv.org/abs/1801.08869
Autor:
Scappucci, G., Klesse, W. M., Yeoh, L. A., Carter, D. J., Warschkow, O., Marks, N. A., Jaeger, D. L., Capellini, G., Simmons, M. Y., Hamilton, A. R.
Extending chip performance beyond current limits of miniaturisation requires new materials and functionalities that integrate well with the silicon platform. Germanium fits these requirements and has been proposed as a high-mobility channel material,
Externí odkaz:
http://arxiv.org/abs/1503.05994
Publikováno v:
Nanotechnology 20, 295302 (2009)
In this paper we demonstrate atomic-scale lithography on hydrogen terminated Ge(001. The lithographic patterns were obtained by selectively desorbing hydrogen atoms from a H resist layer adsorbed on a clean, atomically flat Ge(001) surface with a sca
Externí odkaz:
http://arxiv.org/abs/0912.0754
Publikováno v:
Phys. Rev. B 80, 233202 (2009)
We present a systematic study of the influence of the encapsulation temperature on dopant confinement and electrical properties of Ge:P delta-doped layers. For increasing growth temperature we observe an enhancement of the electrical properties accom
Externí odkaz:
http://arxiv.org/abs/0912.0755