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Autor:
Manuel Hinojosa, Juan Jiménez, Oscar Martínez, Shabnam Dadgostar, Cantia Belloso Casuso, Iván García
Publikováno v:
UVaDOC. Repositorio Documental de la Universidad de Valladolid
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Producción Científica
The diffusion length of minority carriers in a p-doped InGaP layer is derived from the cathodoluminescence (CL) intensity profiles. Two procedures are used. First, the CL profile is recorded along a line crossing the inte
The diffusion length of minority carriers in a p-doped InGaP layer is derived from the cathodoluminescence (CL) intensity profiles. Two procedures are used. First, the CL profile is recorded along a line crossing the inte