Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Cangsang Zhao"'
Autor:
Cangsang Zhao, Yong-Gee Ng, J. Kolonsek, Uddalak Bhattacharya, H.D. Varadarajan, N. Nintunze, K. Sarkez, M. Denham, Y. Lu
Publikováno v:
IEEE Journal of Solid-State Circuits. 34:1564-1570
This 18 Mb pipeline-burst cache SRAM has 12.3 GB/s data transfer rate. The 14.3/spl times/14.6 mm/sup 2/ chip uses a 5.6 /spl mu/m/sup 2/ (2.22/spl times/2.52) 6-transistor cell and is fabricated on 0.18 /spl mu/m 6-metal-layer, 1.3-1.5 V CMOS. The p
Autor:
Greg Taylor, Fabrice Paillet, J. Tschanz, Jianping Xu, Mingwei Huang, Vivek De, Tanay Karnik, Peter Hazucha, Gerhard Schrom, Cangsang Zhao, Paolo Aseron
Publikováno v:
ISSCC
The impedance of a microprocessor power-delivery network peaks at ~140MHz, resulting in power-grid resonance, which lowers operating frequency and compromises reliability. A suppression circuit uses an active-damping technique with a maximum of 12.7d
Autor:
Cangsang Zhao, Reinhart Engelmann
Publikováno v:
Applied Physics Letters. 69:3623-3625
Strongly confining waveguides were fabricated in LiTaO3 at high temperature (540–610 °C) by short‐time (≤6 s) rapid thermal annealing. Single‐step photolithography is able to accomplish the simultaneous fabrication of a waveguide and a perio
Autor:
Cangsang Zhao, Reinhart Engelmann
Publikováno v:
Applied Physics Letters. 67:1812-1814
A double layer of single domains with opposing polarizations has been formed on both c faces by rapid thermal annealing of proton‐exchanged z‐cut LiTaO3 at above the Curie temperature. The formed top single‐domain layers have inward‐directed
Autor:
Eyal Fayneh, C.H. Lim, R.H. Law, Cangsang Zhao, Ernest Knoll, Feng Wang, Keng L. Wong, Rachael J. Parker
Publikováno v:
2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC..
PLL clock generators are designed for a third-generation NetBurst/spl trade/ processor implemented in a 90nm CMOS process. A cascade configuration offers improved jitter attenuation and facilitates a wide synthesis range. Parameter design takes into
Autor:
null Cangsang Zhao, U. Bhattacharya, M. Denham, J. Kolousek, null Yi Lu, null Yong-Gee Ng, N. Nintunze, K. Sarkez, H. Varadarajan
Publikováno v:
1999 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC. First Edition (Cat. No.99CH36278).
Autor:
Cangsang Zhao, Reinhart W.H. Engelmann
Publikováno v:
Nonlinear Frequency Generation and Conversion.
Short-period domain inverted gratings with considerable inversion depth can be formed on the -z face of LiTaO3 by proton exchange in benzoic rather than pyrophosphoric acid followed by rapid thermal annealing at temperatures around 540 - 610 degree(s
Autor:
Jianping Xu, Hazucha, P., Mingwei Huang, Aseron, P., Paillet, F., Schrom, G., Tschanz, J., Cangsang Zhao, De, V., Karnik, T., Taylor, G.
Publikováno v:
2007 IEEE International Solid-State Circuits Conference. Digest of Technical Papers; 2007, p286-603, 318p
Autor:
Wong, K.L., Fayneh, E., Knoll, E., Law, R.H., Lim, C.H., Parker, R.J., Feng Wang, Cangsang Zhao
Publikováno v:
2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC; 2003, p422-422, 1p
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