Zobrazeno 1 - 10 of 30 pro vyhledávání: '"Canan Baristiran Kaynak"'
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Akademický článek
Gain enhancement of BiCMOS on-chip sub-THz antennas by mean of meta-cells
Autor: Matteo Stocchi, Zhibo Cao, Christopher Hardly Joseph, Thomas Voss, Davide Mencarelli, Luca Pierantoni, Canan Baristiran Kaynak, Joachim Hebeler, Thomas Zwick, Matthias Wietstruck, Mehmet Kaynak
Publikováno v: Scientific Reports, Vol 12, Iss 1, Pp 1-9 (2022)
Abstract A MM-loaded sub-THz on-chip antenna with a narrow beamwidth, 9 dB gain and a simulated peak efficiency of 76% at the center frequency of 300 GHz is presented. By surrounding the antenna with a single MM-cell ring defined solely on the top me
Externí odkaz: https://doaj.org/article/ae4de9da8c124d2185c25cef99fe3782
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2
Akademický článek
Advanced numerical investigation of the heat flux in an array of microbolometers
Autor: Matteo Stocchi, Davide Mencarelli, Luca Pierantoni, Alexander Göritz, Canan Baristiran Kaynak, Matthias Wietstruck, Mehmet Kaynak
Publikováno v: Scientific Reports, Vol 9, Iss 1, Pp 1-6 (2019)
Abstract The investigation of the thermal properties of an array of microbolometers has been carried out by mean of two independent numerical analysis, respectively the Direct-Simulation Monte Carlo (DSMC) and the classic diffusive approach of the Fo
Externí odkaz: https://doaj.org/article/d28aeb84b1d74d4d8ac68f22d69169ac
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3
Process Effects on the Noise Performance of SiGe/Si Multi Quantum Well Thermistor
Autor: Yuji Yamamoto, Yasar Gurbuz, Mehmet Kaynak, A. Goeritz, Canan Baristiran Kaynak, F. Korndoerfer, M. Stocchi, Matthias Wietstruck
Publikováno v: ECS Transactions. 93:105-108
In this paper, the process effects of SiGe/Si multi quantum well (MQW) stack is presented in terms of its 1/f noise performance in an intrinsic thermal detector device. In particular, boron (B) doping in SiGe quantum wells and carbon (C) delta layer
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fe7539551a9ac10441b6c16c7d288540
https://doi.org/10.1149/09301.0105ecst
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5
Layer Transfer Process Development For SiGe Based Microbolometer Integration
Autor: Patrick Heinrich, Matthias Wietstruck, U. Saarow, Yuji Yamamoto, Mehmet Kaynak, A. Goeritz, Thomas Voss, Canan Baristiran Kaynak, Patrick Krueger
Publikováno v: 2020 IEEE 8th Electronics System-Integration Technology Conference (ESTC).
This paper presents the transfer of the SiGe multi quantum well (MQW) layer stack on top of a CMOS wafer for the integration of a microbolometer device. Due to the limitations of a thermal budget for the post processing of a CMOS wafer, a full layer
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b00eb1f04bd1d0af98a886b11d3ab973
https://doi.org/10.1109/estc48849.2020.9229812
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6
SUMCASTEC_200804_Highly Sensitive Capacitive Sensor Based on Injection Locked Oscillators with ppm Sensing Resolution
Autor: Meissa Babay, Clement Hallepee, Claire Dalmay, Bruno Barelaud, Emre Can Durmaz, Canan Baristiran Kaynak, Mehmet Kaynak, David Cordeau, Arnaud POTHIER
This paper presents the design and the implementation of an ultra-sensitive capacitive sensor based on an injection-locked oscillator architecture able to achieve ppm sensing resolution. The proposed RF IC chip, implemented on a BiCMOS SiGe 0.25 μm
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______2659::6d9be194f2fb9f0c314921e606b94618
https://zenodo.org/record/4699691
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7
Highly Sensitive Capacitive Sensor Based on Injection Locked Oscillators with ppm Sensing Resolution
Autor: Mehmet Kaynak, Arnaud Pothier, Canan Baristiran Kaynak, Meissa Babay, Clement Hallepee, Bruno Barelaud, Emre Can Durmaz, Claire Dalmay, David Cordeau
Publikováno v: IMS 2020 IEEE MTT-S International Microwave Symposium
IMS 2020 IEEE MTT-S International Microwave Symposium, Aug 2020, Los Angeles, United States
2020 IEEE/MTT-S International Microwave Symposium (IMS)
International audience; This paper presents the design and the implementation of an ultra-sensitive capacitive sensor based on an injection-locked oscillator architecture able to achieve ppm sensing resolution. The proposed RF IC chip, implemented on
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bd12647782c53ebdf82e337ad0e5210b
https://hal.science/hal-02939709
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10
UHF-Dielectrophoresis Crossover Frequency as a New Marker for Discrimination of Glioblastoma Undifferentiated Cells
Autor: Marie-Odile Jauberteau, Serge Battu, Canan Baristiran Kaynak, Fabrice Lalloué, Mehmet Kaynak, Arnaud Pothier, Barbara Bessette, Sofiane Saada, Cristiano Palego, Pierre Blondy, Claire Dalmay, Remi Manczak, Gaëlle Bégaud, Thomas Provent
Publikováno v: IEEE Journal of Electromagnetics, RF and Microwaves in Medicine and Biology
IEEE Journal of Electromagnetics, RF and Microwaves in Medicine and Biology, IEEE, 2019, 3 (3), pp.191-198. ⟨10.1109/JERM.2019.2895539⟩
IEEE Journal of Electromagnetics, RF and Microwaves in Medicine and Biology, IEEE, In press, 3 (3), pp.191-198. ⟨10.1109/jerm.2019.2895539⟩
IEEE Journal of Electromagnetics, RF and Microwaves in Medicine and Biology, IEEE, 2019, pp.1-8
International audience; This article introduces the first results of dielectric spectroscopy characterization of glioblastoma cells; measuring their crossover frequencies in the Ultra High Frequency range (above 50 MHz) by dielectrophoresis technique
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::397017038f18dd7c5249500a5d0c7b53
https://hal.archives-ouvertes.fr/hal-02486098
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