Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Camron Kouhestani"'
Publikováno v:
ACSSC
Unmanned aircraft systems (UASs) have grown significantly within the private sector with ease of acquisition and platform capabilities far outstretching what previously existed. Where once the operation of these platforms was limited to skilled indiv
Publikováno v:
ICCST
Physical security systems (PSS) and humans are inescapably tied in the current physical security paradigm. Yet, physical security system evaluations often end at the console that displays information to the human. That is, these evaluations do not ac
Publikováno v:
ICCST
Unmanned aircraft system (UAS) technologies have gained immense popularity in the commercial sector and have enabled capabilities that were not available just a short time ago. Once limited to the domain of highly skilled hobbyists or precision milit
Publikováno v:
ICCST
There is a desire to detect and assess unmanned aerial systems (UAS) with a high probability of detection and low nuisance alarm rates in numerous fields of security. Currently available solutions rely upon exploiting electronic signals emitted from
Publikováno v:
ICCST
Deep learning techniques have demonstrated the ability to perform a variety of object recognition tasks using visible imager data; however, deep learning has not been implemented as a means to autonomously detect and assess targets of interest in a p
Autor:
Duc D. Nguyen, Camron Kouhestani, Roderick A. B. Devine, Harold P. Hjalmarson, Kenneth E. Kambour, Clay Mayberry
Publikováno v:
ECS Transactions. 50:223-232
The increase in the magnitude of the threshold voltage of a positive-channel metal oxide semiconductor (PMOS) under negative gate biasing (negative bias temperature instability) is attributed to the build-up of charge in the gate insulator. We have s
Publikováno v:
physica status solidi c. 10:259-262
We have studied defect charging and discharging resulting from negative bias temperature instability in nitrided SiO2 gate insulator field effect transistors. Using pseudo-DC and pulsed stressing methods, we are able to extract at least three individ
Autor:
Duc N. Nguyen, Gang Li, Ankit Kumar, N. Rosen, Yang Yang, Clay Mayberry, Chun-Chao Chen, Camron Kouhestani, Roderick A. B. Devine, K. E. Kambour
Publikováno v:
IEEE Transactions on Nuclear Science. 59:2902-2908
Initial experimental work has demonstrated that x-ray bombardment of organic-based photocells (specifically P3HT:PCBM-based) leads to a reduction in the open-circuit voltage (Voc) without apparent change in the carrier relaxation time. The variation
Publikováno v:
2014 IEEE International Integrated Reliability Workshop Final Report (IIRW).
The existence of multiple, physically distinct components of Negative Bias Temperature Instability requires a measurement methodology which allows the extraction of each component independently. In this paper we present results obtained at room tempe
Publikováno v:
2013 IEEE International Integrated Reliability Workshop Final Report.
This paper reports new high temperature measurements of Negative Bias Temperature Instability induced interface states in both NMOS and PMOS devices. Evidence of annealing of the interface states, previously thought to be “permanent”, is presente