New trends of non linear modeling for microwave devices in a circuit/system environment

Autor: Barataud, D., Campovecchio, M., Teyssier, J.P., Nebus, J.M., Quéré, R., Obregon, J.

Publikováno v: GaAs Gallium Arsenide Applications Symposium
GaAs Gallium Arsenide Applications Symposium, Oct 1998, Amsterdam, Netherlands. pp. 158-163, ⟨10.6092/unibo/amsacta/1541⟩
Barataud, D. ; Campovecchio, M. ; Teyssier, J.P. ; Nebus, J.M. ; Quéré, R. ; Obregon, J. (1998) New trends of nonlinear modeling for microwave devices in a circuit/system environment. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Specific pulsed measurement techniques are presented to discriminate thermal and trapping effects during the modeling process. An electrothermal modeling approach, a new trap model and a specific nonlinear distributed topology are proposed. Moreover,

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::07ed062f65c13150cec52c2b5e440021
https://hal-unilim.archives-ouvertes.fr/hal-01066973

Trap characterization of microwave GaN HEMTs based on frequency dispersion of the output-admittance.

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Publikováno v: 2014 9th European Microwave Integrated Circuit Conference; 2014, p464-467, 4p

Modeling of trap induced dispersion of large signal dynamic Characteristics of GaN HEMTs.

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Harmonic control in package of power GaN transistors for high efficiency and wideband performances in S-band.

Autor: Cheron, J., Campovecchio, M., Barataud, D., Reveyrand, T., Stanislawiak, M., Eudeline, P., Floriot, D., Demenitroux, W.

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