Zobrazeno 1 - 10
of 167
pro vyhledávání: '"Campbell, Paul M"'
Autor:
DeMell, Jennifer E., Naumov, Ivan, Stephen, Gregory M., Blumenschein, Nicholas A., Sun, Y. -J. Leo, Fedorko, Adrian, Robinson, Jeremy T., Campbell, Paul M., Taylor, Patrick J., Heiman, Don, Dev, Pratibha, Hanbicki, Aubrey T., Friedman, Adam L.
Publikováno v:
Adv. Funct. Mat., 2311875 (2023)
Mechanical stacking of two dissimilar materials often has surprising consequences for heterostructure behavior. In particular, a two-dimensional electron gas (2DEG) is formed in the heterostructure of the topological crystalline insulator Pb0.24Sn0.7
Externí odkaz:
http://arxiv.org/abs/2307.13113
Autor:
Stephen, Gregory M., Naumov, Ivan, Blumenschein, Nicholas A., Sun, Yi-Jan Leo, DeMell, Jennifer E., Shirodkar, Sharmila, Dev, Pratibha, Taylor, Patrick J., Robinson, Jeremy T., Campbell, Paul M., Hanbicki, Aubrey T., Friedman, Adam L.
While heterostructures are ubiquitous tools enabling new physics and device functionalities, the palette of available materials has never been richer. Combinations of two emerging material classes, two-dimensional materials and topological materials,
Externí odkaz:
http://arxiv.org/abs/2207.13598
Akademický článek
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Autor:
Campbell, Paul M.1, Willmott, Thomas1, Humphreys, Gavin J.1, Piscoran, Oana2, Chea, Houda2, Summers, Angela M.2, Konkel, Joanne E.3, Knight, Christopher G.4, Augustine, Titus2, McBain, Andrew J.1 Andrew.McBain@manchester.ac.uk
Publikováno v:
Frontiers in Microbiomes. 11/3/2023, p1-14. 14p.
Akademický článek
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Akademický článek
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Autor:
Tedesco, Joseph L., Jernigan, Glenn G., Culbertson, James C., Hite, Jennifer K., Yang, Yang, Daniels, Kevin M., Myers-Ward, Rachael L., Eddy, Jr., Charles R., Robinson, Joshua A., Trumbull, Kathleen A., Wetherington, Maxwell T., Campbell, Paul M., Gaskill, D. Kurt
Publikováno v:
Appl. Phys. Lett. 96, 222103 (2010)
Epitaxial graphene layers were grown on the C-face of 4H- and 6H-SiC using an argon-mediated growth process. Variations in growth temperature and pressure were found to dramatically affect the morphological properties of the layers. The presence of a
Externí odkaz:
http://arxiv.org/abs/1007.5064
Autor:
Caldwell, Joshua D., Anderson, Travis J., Culbertson, James C., Jernigan, Glenn G., Hobart, Karl D., Kub, Fritz J., Tadjer, Marko J., Tedesco, Joseph L., Hite, Jennifer K., Mastro, Michael A., Myers-Ward, Rachael L., Eddy Jr., Charles R., Campbell, Paul M., Gaskill, D. Kurt
Publikováno v:
ACS Nano 4(2), 1108-1114 (2010)
In order to make graphene technologically viable, the transfer of graphene films to substrates appropriate for specific applications is required. We demonstrate the dry transfer of epitaxial graphene (EG) from the C-face of 4H-SiC onto SiO2, GaN and
Externí odkaz:
http://arxiv.org/abs/0910.2624
Autor:
Tedesco, Joseph L., VanMil, Brenda L., Myers-Ward, Rachael L., Culbertson, James C., Jernigan, Glenn G., Campbell, Paul M., McCrate, Joseph M., Kitt, Stephen A., Eddy, Jr., Charles R., Gaskill, D. Kurt
Publikováno v:
ECS Trans. 19, 137 (2009)
Graphene was epitaxially grown on both the C- and Si-faces of 4H- and 6H-SiC(0001) under an argon atmosphere and under high vacuum conditions. Following growth, samples were imaged with Nomarski interference contrast and atomic force microscopies and
Externí odkaz:
http://arxiv.org/abs/0907.5029
Autor:
Tedesco, Joseph L., VanMil, Brenda L., Myers-Ward, Rachael L., McCrate, Joseph M., Kitt, Stephen A., Campbell, Paul M., Jernigan, Glenn G., Culbertson, James C., Eddy, Jr., Charles R., Gaskill, D. Kurt
Publikováno v:
Appl. Phys. Lett 95, 122102 (2009)
Epitaxial graphene films were grown in vacuo by silicon sublimation from the (0001) and (000-1) faces of 4H- and 6H-SiC. Hall effect mobilities and sheet carrier densities of the films were measured at 300 K and 77 K and the data depended on the grow
Externí odkaz:
http://arxiv.org/abs/0907.5026