Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Camillo Bresolin"'
Publikováno v:
ECS Transactions. 10:85-94
Some examples of contamination by mass interference are studied in this work, specifically the molybdenum contamination in indium and boron implantations. This contamination is detected by Elymat and DLTS analyses, whereas it is missed by SPV, which
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b983b46a7e020dc274f4a630cf8e36b8
https://doi.org/10.1149/1.2773979
https://doi.org/10.1149/1.2773979
Publikováno v:
Microelectronic Engineering. 83:2225-2228
Self-ionized plasma (SIP) sputtering has become a widely accepted solution for the copper barrier and seed deposition in narrow trenches typical of the backend of line structures starting from the 90nm technology node and beyond. Process performances
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccab631090f0ac13a9644858a6210fe6
https://doi.org/10.1016/j.mee.2006.10.002
https://doi.org/10.1016/j.mee.2006.10.002
Publikováno v:
Microelectronic Engineering. 70:196-200
An atomic force microscope (AFM) was used to study anomalies in the titanium disilicide formation of narrow (0.26 µm) poly lines at the edge of n+ and p+ implant masks; a special test structure was designed both for morphological and electrical eval
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e78287bbe3f2bde6f561062e0086009c
https://doi.org/10.1016/s0167-9317(03)00376-9
https://doi.org/10.1016/s0167-9317(03)00376-9
Autor:
Agostino Pirovano, Roberto Bez, Innocenzo Tortorelli, A. Modelli, Andrea Redaelli, S. Lavizzari, Camillo Bresolin, Fabio Pellizzer, Davide Erbetta, Enrico Varesi, Mattia Boniardi
Publikováno v:
2012 4th IEEE International Memory Workshop.
The phase change active material exploration represents an important stage in order to further strengthen the know-how on the Phase Change Memory (PCM) technology. This work reports a path for PCM material exploration toward the tellurium poor region
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72f012c550e4dfe0847a5831823ed442
https://doi.org/10.1109/imw.2012.6213679
https://doi.org/10.1109/imw.2012.6213679
Autor:
Innocenzo Tortorelli, Davide Erbetta, A. Modelli, Daniele Ielmini, Mario Allegra, Agostino Pirovano, Enrico Varesi, Michele Magistretti, Roberto Bez, Camillo Bresolin, Fabio Pellizzer, Andrea L. Lacaita, Andrea Redaelli, Mattia Boniardi
The phase-change memory (PCM) technology is considered as one of the most attractive non-volatile memory concepts for next generation data storage. It relies on the ability of a chalcogenide material belonging to the Ge–Sb–Te compound system to r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::06253dff5de431804e75d250ff7035c7
http://hdl.handle.net/11311/637376
http://hdl.handle.net/11311/637376
