Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Cameron J. Brooks"'
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:1119-1124
Ta and Ta composites with other elements have been developed as low stress absorbers for x-ray mask technology. These thin films are often produced in small quantities by sputter deposition from targets of pure Ta with chips of the minor elements pla
Publikováno v:
IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control. 45:719-727
Optical detection of ultrasound has numerous advantages over traditional piezoelectric methods. These systems offer noncontact inspection, rapid scanning capabilities, fine spatial sampling, and large bandwidths. In addition, difficulties associated
Publikováno v:
Applied Physics Letters. 66:2168-2170
A simple interferometric technique is described which can be used to accurately measure the phase response of waveguide grating filters. A narrowband, tunable Ti:sapphire laser is used in a Michelson interferometer configuration, where light reflecte
Publikováno v:
SPIE Proceedings.
Lithography below sub-130 nm requires minimization of pattern distortions due to mask fabrication. It is essential to understand the impact of each step of the entire process flow, since the fabrication (and the resulting bow of the mask as well as t
Autor:
Cameron J. Brooks, Christopher Magg, Michael P. Schlax, Edward G. Lovell, Roxann L. Engelstad
Publikováno v:
SPIE Proceedings.
A crosscutting issue for Next Generation Lithographies is the ability to monitor and control the uniformity of thin film stresses. Because the global stress fields of thin film layers can introduce distortions in lithographic masks, it is essential t
Autor:
Kevin W. Collins, Monica Barrett, Kenneth C. Racette, Steven C. Nash, Christopher Magg, Michael J. Trybendis, Neal Caldwell, Lucien Bouchard, Mark Lawliss, Cameron J. Brooks, Michael J. Lercel, Raymond Walter Jeffer
Publikováno v:
SPIE Proceedings.
Mask fabrication is one of the difficult challenges with all Next Generation Lithography (NGL) technologies. X-ray, e-beam projection, and ion-beam projection lithography all use some form of membrane mask, and extreme ultraviolet (EUV) lithography u
Publikováno v:
SPIE Proceedings.
The development of a low distortion mask is essential for advanced lithographic technologies to meet the allotted error budgets for sub-130 nm regimes. Predicting mask- related distortions is the first step in the design and optimization process. Thi
Publikováno v:
SPIE Proceedings.
A resist process has been defined, characterized and optimized using Shipley UVN2 (r) chemically amplified negative resist for the fabrication of x-ray membrane masks (1X) using electron-beam lithography. Advanced masks require precise control of 150
Autor:
Robert P. Rippstein, Cameron J. Brooks, Michael J. Lercel, Shalom J. Wind, Azalia A. Krasnoperova, Alex L. Flamholz, E. Kratschmer
Publikováno v:
SPIE Proceedings.
This paper discusses the resolution capabilities of proximity x-ray lithography (PXRL) system. Exposure characteristics of features designed at 150 nm pitch size: 75 nm dense lines with 1:1 duty ratio, 2D features at 1:1 and 1:2 duty ratios and isola
Publikováno v:
SPIE Proceedings.
This paper provides an in-depth report of the advanced materials and process technology being developed for x-ray mask manufacturing at IBM. Masks using diamond membranes as a replacement for silicon carbide are currently being fabricated. Alternate