Zobrazeno 1 - 10
of 704
pro vyhledávání: '"Camassel, J"'
The buffer layer has been analysed by combined micro-Raman and micro-transmission experiments. The epitaxial graphene growth on the (0001) Si face of 6H-SiC substrates was tuned to get a mixed surface at the early stage of graphitization with i) bare
Externí odkaz:
http://arxiv.org/abs/1212.1196
Autor:
Jouault, B., Camara, N., Jabakhanji, B., Caboni, A., Consejo, C., Godignon, P., Maude, D. K., Camassel, J.
We demonstrate that the carrier concentration of epitaxial graphene devices grown on the C-face of a SiC substrate is efficiently modulated by a buried gate. The gate is fabricated via the implantation of nitrogen atoms in the SiC crystal, 200 nm bel
Externí odkaz:
http://arxiv.org/abs/1106.5923
We separate localization and interaction effects in epitaxial graphene devices grown on the C-face of a 4H-SiC substrate by analyzing the low temperature conductivities. Weak localization and antilocalization are extracted at low magnetic fields, aft
Externí odkaz:
http://arxiv.org/abs/1104.1342
Autor:
Camara, N., Jouault, B., Caboni, A., Jabakhanji, B., Desrat, W., Pausas, E., Consejo, C., Mestres, N., Godignon, P., Camassel, J.
Using high temperature annealing conditions with a graphite cap covering the C-face of an 8deg off-axis 4H-SiC sample, large and homogeneous single epitaxial graphene layers have been grown. Raman spectroscopy shows evidence of the almost free-standi
Externí odkaz:
http://arxiv.org/abs/1007.2977
Autor:
Camara, N., Rius, G., Huntzinger, J-R., Tiberj, A., Mestres, N., Perez-Murano, F., Godignon, P., Camassel, J.
We present an investigation of large, isolated, graphene ribbons grown on the C-face of on-axis semi-insulating 6H-SiC wafers. Using a graphite cap to cover the SiC sample, we modify the desorption of the Si species during the Si sublimation process.
Externí odkaz:
http://arxiv.org/abs/0812.4351
Autor:
Camara, N., Rius, G., Huntzinger, J. -R., Tiberj, A., Magaud, L., Mestres, N., Godignon, P., Camassel, J.
An investigation of the early stage formation of graphene on the C-face of 6H-SiC is presented. We show that the sublimation of few atomic layers of Si out of the SiC substrate is not homogeneous. In good agreement with the results of theoretical cal
Externí odkaz:
http://arxiv.org/abs/0810.4888
Autor:
Camara, N., Rius, G., Huntzinger, J. -R., Tiberj, A., Mestres, N., Godignon, P., Camassel, J.
We present an innovative method of selective epitaxial growth of few layers graphene (FLG) on a pre-patterned SiC substrate. The methods involves, successively, the sputtering of a thin AlN layer on top of a mono-crystalline SiC substrate and, then,
Externí odkaz:
http://arxiv.org/abs/0806.4056
We report a detailed experimental and theoretical investigation of the effect of residual strain, and strain relaxation, which manifests itself at the Si/SiO$_{2}$ interfaces in commercial silicon-on-insulator (SOI) wafers. SOI material is made of a
Externí odkaz:
http://arxiv.org/abs/cond-mat/0009459
Autor:
Sun, J.W., Jokubavicius, V., Liljedahl, R., Yakimova, R., Juillaguet, S., Camassel, J., Kamiyama, S., Syväjärvi, M.
Publikováno v:
In Thin Solid Films 1 November 2012 522:33-35
Autor:
Portail, M., Michon, A., Vézian, S., Lefebvre, D., Chenot, S., Roudon, E., Zielinski, M., Chassagne, T., Tiberj, A., Camassel, J., Cordier, Y.
Publikováno v:
In Journal of Crystal Growth 15 June 2012 349(1):27-35