Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Calvin T. Gabriel"'
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:1420-1424
Although copper damascene interconnects offer many advantages over conventional subtractive etched Al alloys, the challenges and costs associated with converting to copper have combined to extend the useful life of Al alloy etching into the deep subm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7bd8ab332edd679875a7809cd5af4dad
https://doi.org/10.1116/1.582364
https://doi.org/10.1116/1.582364
Autor:
Calvin T. Gabriel
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 17:1494-1500
The main types of gate oxide damage measurement techniques are examined and compared, leading to a selection of “application-specific” damage measurement techniques. Each technique has strengths and weaknesses, so no single measurement can comple
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e92185c175845c230ad87f13174c039c
https://doi.org/10.1116/1.581842
https://doi.org/10.1116/1.581842
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 15:697-701
The variation of metal etch rate with spacing between metal lines was measured from scanning electron microscopy micrographs of TiN/Al–0.5%Cu/TiN wafers etched in a high density inductively coupled plasma metal etcher. The metal etch rate was found
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8461ca57bb76209774026b5a46aad60c
https://doi.org/10.1116/1.580804
https://doi.org/10.1116/1.580804
Autor:
Calvin T. Gabriel, Subhash R. Nariani
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 14:990-994
Antenna structures are commonly used to study charging, and the resultant metal–oxide–semiconductor gate oxide damage, from plasma processing. Degradation of various device parameters, such as gate leakage and threshold voltage, have been correla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b41daccb1ffa59c3b6e55fe0ee6875e3
https://doi.org/10.1116/1.580068
https://doi.org/10.1116/1.580068
Publikováno v:
Journal of The Electrochemical Society. 142:L208-L211
Gate oxide damage resulting from high density plasma chemical vapor deposition of silicon oxide was investigated using damage sensitive antenna structures with area ratios up to 200,000 :1. Significant damage was detected from an unoptimized oxide de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bea0b60cb46b3dbfbd6ddeb185c0f32c
https://doi.org/10.1149/1.2048449
https://doi.org/10.1149/1.2048449
Autor:
Calvin T. Gabriel, James P. McVittie
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 13:900-904
Modeling and previous experiments have indicated that charging damage during metal–oxide semiconductor (MOS) polysilicon gate etching occurs just before endpoint when the last of the exposed polysilicon can collect excess plasma currents that cause
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ef1705fe22a28d3ae93c6914cab50ea
https://doi.org/10.1116/1.579849
https://doi.org/10.1116/1.579849
Autor:
Calvin T. Gabriel, Milind Weling
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 12:1334-1338
Charge buildup damage to gate oxide during lightly doped drain (LDD) spacer oxide etch was studied by measuring gate leakage of fully processed transistors over thin oxide attached to area‐intensive or edge‐intensive polycide antenna structures o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c6572f307fff0cecd7379ab4468a9a9
https://doi.org/10.1116/1.579317
https://doi.org/10.1116/1.579317
Autor:
Dipankar Pramanik, Daniel Claire Baker, Vivek Jain, Milind Weling, J. Eakin, William J. Boardman, Calvin T. Gabriel
Publikováno v:
Microelectronics Journal. 25:xviii-xxv
This paper describes a 0.6 micron triple level interconnect scheme for ASIC application. This interconnect scheme has been used with 0.6 micron twin well CMOS technology having polycide gates. Excellent planarization of BPSG films was achieved at a l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ace85a8a527b5dc5de7c8aebf7741b9
https://doi.org/10.1016/0026-2692(94)90174-0
https://doi.org/10.1016/0026-2692(94)90174-0
Autor:
R. Wong, Kuang-Yeh Chang, David P. Chan, William J. Boardman, Calvin T. Gabriel, Vivek Jain, Subhash R. Nariani, K. Gordon
Publikováno v:
[1992] Proceedings. Fifth Annual IEEE International ASIC Conference and Exhibit.
Amorphous silicon has been used as a programmable material for a metal-to-metal anti-fuse. A study on the characteristics of such an anti-fuse and the parameters that affect its programming characteristics is presented. In the unprogrammed state the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ded6f96a2bc2f5cbfa758abab7b328b
https://doi.org/10.1109/asic.1992.270296
https://doi.org/10.1109/asic.1992.270296
Publikováno v:
Proceedings of IEEE Custom Integrated Circuits Conference - CICC '94.
A programmable anti-fuse, using amorphous silicon between levels of metal, is studied. The step coverage of the a-Si has the most significant impact on the anti-fuse characteristics. Other critical process parameters are also identified. The anti-fus
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6494c22d96d17915519cd9c5b23a7e3a
https://doi.org/10.1109/cicc.1994.379677
https://doi.org/10.1109/cicc.1994.379677